333 3 VS-6ESH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt FEATURES eSMP Series Hyperfast recovery time, reduced Q , and soft rr recovery K 175 C maximum operating junction temperature Anode 1 K For PFC, CRM/CCM, snubber operation Cathode Anode 2 Low forward voltage drop 1 Low leakage current 2 Meets MSL level 1, per J-STD-020, LF maximum peak SMPC (TO-277A) of 260 C Meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 3D Models DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage PRIMARY CHARACTERISTICS drop and hyperfast recovery time. I 6 A F(AV) The planar structure and the platinum doped life time control V 600 V R guarantee the best overall performance, ruggedness, and V at I 1.05 V F F reliability characteristics. t 33 ns rr (typ.) These devices are intended for use in PFC, boost, lighting, T max. 175 C J in the AC/DC section of SMPS, freewheeling and clamp Package SMPC (TO-277A) diodes. Circuit configuration Single The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 145 C 6 F(AV) Sp A Non-repetitive peak surge current I T = 25 C 90 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 6 A - 1.30 1.80 V F Forward voltage V F I = 6 A, T = 150 C - 1.05 1.55 F J V = V rated - - 5 R R Reverse leakage current I A R T = 150 C, V = V rated - 50 300 J R R Junction capacitance C V = 600 V - 8 - pF T R Revision: 19-Jan-2021 Document Number: 94984 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-6ESH06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 33 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 40 F R rr Reverse recovery time t ns rr T = 25 C -40 - J T = 125 C - 75 - J I = 6 A F T = 25 C - 6.8 - J Peak recovery current I dI /dt = 500 A/s A RRM F T = 125 C - 11 - J V = 400 V R T = 25 C - 140 - J Reverse recovery charge Q nC rr T = 125 C - 400 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -65 - 175 C J Stg range Thermal resistance, junction to mount R -2.4 3.5 C/W thJM 0.1 g Approximate weight 0.0035 oz. Marking device Case style SMPC (TO-277A) NEH6 100 1000 175 C 100 150 C 10 10 125 C T = 175 C J 1 1 0.1 T = 150C J 25 C T = 125C J T = 25 C J 0.01 T = -40 C J 0.1 0.001 0.2 0.6 1.0 1.4 1.8 2.2 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 19-Jan-2021 Document Number: 94984 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R