333 3 VS-6EVL06HM3 www.vishay.com Vishay Semiconductors Ultralow V Ultrafast Rectifier, 6 A FRED Pt F FEATURES eSMP Series Heatsink Ultrafast recovery time, extremely low V and F soft recovery k For PFC CCM operation kk Low forward voltage drop, low power losses Low leakage current 11 2 Meets MSL level 1, per J-STD-020, 1 LF maximum peak of 260 C Pin 1 Pin 2 22 AEC-Q101 qualified SlimDPAK (TO-252AE) - Automotive ordering code: base P/NHM3, meets JESD 201 class 2 whisker test LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models TYPICAL APPLICATIONS These devices are intended for use in PFC boost stage in th e PRIMARY CHARACTERISTICS AC/DC section of SMPS inverters, or as freewheelin g I 6 A diodes. Their extremely optimized stored charge and low F(AV) recovery current minimize the switching losses and reduce V 600 V R over dissipation in the switching element and snubbers. V at I 0.98 V F F t (typ.) 34 ns rr MECHANICAL DATA T max. 175 C J Case: SlimDPAK (TO-252AE) Package SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Circuit configuration Single Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 158 C 6 F(AV) C A Non-repetitive peak surge current I T = 25 C, 10 ms sine pulse wave 80 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 6 A - 1.15 1.35 F Forward voltage V F I = 6 A, T = 150 C - 0.98 1.15 F J V = V rated - - 5 R R Reverse leakage current I A R T = 150 C, V = V rated - - 125 J R R Junction capacitance C V = 600 V - 10 - pF T R Revision: 13-Jan-2021 Document Number: 96141 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-6EVL06HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 45 - F F R I = 1 A, dI /dt = 100 A/s, V = 30 V - 34 - F F R Reverse recovery time t I = 0.5 A, I = 1 A, I = 0.25 A - - 50 ns rr F R RR T = 25 C -65 - J T = 125 C - 90 - J I = 6 A F T = 25 C - 9.5 - J Peak recovery current I dI /dt = 500 A/s A RRM F T = 125 C - 13.5 - J V = 400 V R T = 25 C - 320 - J Reverse recovery charge Q nC rr T = 125 C - 620 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -55 - 175 C J Stg range Thermal resistance, junction to mount R -- 2.5 C/W thJM Marking device Case style SlimDPAK (TO-252AE) 6EVL06 100 1000 100 175 C 10 10 T = 175 C 150 C J 1 T = 150 C J 1 0.1 T = 25 C J 25 C T = -40 C J 0.01 0.1 0.001 0 0.5 1.0 1.5 2.0 0 100 200 300 400 500 600 V -Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 10 0 100 200 300 400 500 600 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 13-Jan-2021 Document Number: 96141 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F C - Junction Capacitance (pF) T I - Reverse Current (A) R