333 3 VS-6CVH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 3 A FRED Pt FEATURES Base eSMP Series common Hyperfast recovery time cathode 4 Low forward voltage drop reduced Q and soft rr recovery 44 Low leakage current Very low profile - typical height of 1.3 mm 2 11 175 C operating junction temperature Common 22 cathode Ideal for automated placement 1 3 3 AEC-Q101 qualified, meets JESD 201 class 2 Anode Anode whisker test SlimDPAK (TO-252AE) Polyimide passivation for high reliability standard Meets MSL level 1, per J-STD-020, LF maximum peak LINKS TO ADDITIONAL RESOURCES of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models DESCRIPTION / APPLICATIONS State of the art hyper fast recovery rectifiers designed with PRIMARY CHARACTERISTICS optimized performance of forward voltage drop and hyper fast recovery time. I 2 x 3 A F(AV) The planar structure and the platinum doped life tim e V 100 V R control guarantee the best overall performance, ruggedness V at I 0.75 V F F and reliability characteristics. t (typ.) 20 ns rr These devices are intended for use in PFC boost stage in th e T max. 175 C J AC/DC section of SMPS inverters or as freewheeling diodes . Their extremely optimized stored charge and low recovery Package SlimDPAK (TO-252AE) current minimize the switching losses and reduce Circuit configuration Common cathode over dissipation in the switching element and snubbers. MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 100 V RRM per leg 3 Average rectified forward current I Total device, rated V , T = 166 C F(AV) R C per device 6 A Non-repetitive peak surge current per leg I T = 25 C, 10 ms sine pulse wave 70 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 100 - - BR R R I = 3 A - 0.9 1.04 F I = 3 A, T = 150 C - 0.75 0.82 V F J Forward voltage V F I = 6 A - 1 1.2 F I = 6 A, T = 150 C - 0.85 1.01 F J V = V rated - - 5 R R Reverse leakage current I A R T = 150 C, V = V rated - - 80 J R R Junction capacitance C V = 100 V - 12 - pF T R Revision: 13-Jan-2021 Document Number: 96089 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-6CVH01HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 20 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R RR Reverse recovery time t ns rr T = 25 C -17 - J T = 125 C - 26 - J I = 3 A F T = 25 C - 1.8 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.2 - J V = 160 V R T = 25 C - 15 - J Reverse recovery charge Q nC rr T = 125 C - 41 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg (1)(2) Thermal resistance, junction to ambient R -7590C/W thJA (3) Thermal resistance, junction to mount per leg R -3.24C/W thJM Marking device Case style SlimDPAK (TO-252AE) 6CVH01 Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient dP /dT < 1R D J thJA (2) Free air, mounted or recommended copper pad area thermal resistance R junction to ambient thJA (3) Mounted on infinite heatsink 100 100 175 C 10 150 C 10 125 C 1 T = 175 C J T = -40 C 0.1 J 1 25 C T = 150 C J 0.01 T = 125 C J T = 25 C J 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-Jan-2021 Document Number: 96089 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R