VS-65EPS12LHM3, VS-65APS12LHM3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 65 A FEATURES Very low forward voltage drop Glass passivated pellet chip junction 2 AEC-Q101 qualified meets JESD 201 class 1A 1 1 whisker test 2 Flexible solution for reliable AC power 3 3 rectification TO-247AD 2L TO-247AD 3L High surge, low V rugged blocking diode for DC charging F Base cathode Base cathode stations 2 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS 13 1 3 Cathode Anode Anode Anode On-board and off-board EV / HEV battery chargers Renewable energy inverters VS-65EPS12LHM3 VS-65APS12LHM3 DESCRIPTION PRIMARY CHARACTERISTICS High voltage rectifiers optimized for very low forward I 65 A F(AV) voltage drop with moderate leakage. V 1200 V R These devices are intended for use in main rectification V at I 1.12 V F F (single or three phase bridge). I 1000 A FSM T max. 150 C J Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 65 A F(AV) V 1200 V RRM I 1000 A FSM V 30 A, T = 25 C 1.0 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM I RRM RRM NON-REPETITIVE PEAK REVERSE PART NUMBER PEAK REVERSE VOLTAGE AT 150 C VOLTAGE V mA V VS-65EPS12LHM3 1200 1300 1.3 VS-65APS12LHM3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 121 C, 180 conduction half sine wave 65 F(AV) C 10 ms sine pulse, rated V applied 840 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 1000 10 ms sine pulse, rated V applied 3530 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 5000 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 50 000 A s Revision: 22-Feb-18 Document Number: 96107 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-65EPS12LHM3, VS-65APS12LHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 65 A, T = 25 C 1.12 V FM J Forward slope resistance r 3.98 m t T = 150 C J Threshold voltage V 0.74 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 1.3 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSVALUES UNITS Maximum junction and storage temperature range T , T -40 to +150 C J Stg Maximum thermal resistance, junction to case R DC operation 0.25 thJC Maximum thermal resistance, junction to ambient R 40 C/W thJA Typical thermal resistance, case to heatsink R Mounting surface, smooth, and greased 0.2 thCS 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Case style TO-247AD 2L 65EPS12LH Marking device Case style TO-247AD 3L 65APS12LH 150 150 R (DC) = 0.25 C/W thJC R (DC) = 0.25 C/W thJC 140 140 Conduction angle Conduction angle 130 130 120 120 110 110 100 DC 120 120 60 100 60 90 180 90 30 30 180 90 90 80 0 10203040506070 0 20406080 100 120 Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 22-Feb-18 Document Number: 96107 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Max. Allowable Case Temperature (C) Max. Allowable Case Temperature (C)