VS-60CPU06-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, FRED Pt , 2 x 30 A Base FEATURES common Ultrafast recovery time cathode 2 Low forward voltage drop Low leakage current 1 175 C operating junction temperature 2 Designed and qualified according to 3 JEDEC -JESD 47 Anode 1 Anode 2 Material categorization: for definitions of compliance TO-247AC 3L 13 please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS VS-60CPU06... series are the state of the art ultrafast PRIMARY CHARACTERISTICS recovery rectifiers designed with optimized performance of I 2 x 30 A F(AV) forward voltage drop and ultrafast recovery time. V 600 V R The planar structure and the platinum doped life time control V at I 1.1 V guarantee the best overall performance, ruggedness and F F reliability characteristics. t typ. 27 ns rr These devices are intended for use in the output rectificatio n T max. 175 C J stage of SMPS, welding, UPS, DC/DC converters as well as Package TO-247AC 3L freewheeling diodes in low voltage inverters and choppe r motor drives. Circuit configuration Common cathode Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Repetitive peak reverse voltage V 600 V RRM per leg 30 Average rectified forward current I F(AV) per device Rated V , T = 137 C 60 R C A Non-repetitive peak surge current per leg I T = 25 C, t = 10 ms 300 FSM J p Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 137 C 60 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 1.31 1.65 F Forward voltage V F I = 30 A, T = 150 C - 1.1 1.4 F J V = V rated - 0.02 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 30 250 J R R Junction capacitance C V = 200 V - 22 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 10-Oct-2019 Document Number: 94658 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-60CPU06-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 27 35 F F R Reverse recovery time t T = 25 C -42 - ns rr J T = 125 C - 110 - J I = 30 A T = 25 C F - 5 - J Peak recovery current I dI /dt = - 200 A/s A RRM F T = 125 C - 11 - J V = 200 V R T = 25 C - 110 - J Reverse recovery charge Q nC rr T = 125 C - 630 - J THERMAL - MECHANICAL SPECIFICATIONS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R -0.6 0.9 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.4 - thCS case to heatsink -6.0 - g Weight -0.22- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC 3L 60CPU06 Revision: 10-Oct-2019 Document Number: 94658 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000