VS-60CTQ150-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 30 A FEATURES Base common 175 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term Anode 2 Anode 3L TO-220AB 13Common reliability cathode Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 2 x 30 A F(AV) DESCRIPTION V 150 V R The VS-60CTQ150... center tap Schottky rectifier series has V at I 0.72 V F F been optimized for low reverse leakage at high temperature. I max. 20 mA at 125 C RM The proprietary barrier technology allows for reliable T max. 175 C J operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, E 0.4 mJ AS freewheeling diodes, and reverse battery protection. Package 3L TO-220AB Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 60 A F(AV) V 150 V RRM I t = 5 s sine 710 A FSM p V 30 A , T = 125 C (typical, per leg) 0.69 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-60CTQ150-M3 UNITS Maximum DC reverse voltage V R 150 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 30 Maximum average forward I 50 % duty cycle at T = 137 C, rectangular waveform F(AV) C current, see fig. 5 per device 60 A Following any rated 5 s sine or 3 s rect. pulse 710 Maximum peak one cycle non-repetitive load condition and I FSM with rated V surge current per leg, see fig. 7 RRM 10 ms sine or 6 ms rect. pulse 270 applied Non-repetitive avalanche energy per leg E T = 25 C, I = 0.9 A, L = 1 mH 0.4 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.9 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 15-Aug-17 Document Number: 96254 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-60CTQ150-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP MAX. UNITS 30 A 0.83 0.88 T = 25 C J 60 A 0.98 1.09 Maximum forward voltage drop per leg (1) V V FM See fig. 1 30 A 0.67 0.72 T = 125 C J 60 A 0.82 0.87 T = 25 C 775 A Maximum reverse leakage current per leg J I V = Rated V RM R R See fig. 2 T = 125 C 7.2 20 mA J Typical junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C - 650 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body -7.5 nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range per leg DC operation See fig. 4 1.2 Maximum thermal resistance, R thJC junction to case per package DC operation 0.6 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.25 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style 3 L TO-220AB 60CTQ150 Revision: 15-Aug-17 Document Number: 96254 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000