VS-60CTQ150PbF, VS-60CTQ150-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 30 A FEATURES Base common 175 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance TO-220AB Guard ring for enhanced ruggedness and long Anode 2 Anode 13Common term reliability cathode Designed and qualified according to JEDEC-JESD47 Material categorization: For definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package TO-220AB DESCRIPTION I 2 x 30 A F(AV) The VS-60CTQ150... center tap Schottky rectifier series has V 150 V R been optimized for low reverse leakage at high temperature. V at I 0.72 V F F The proprietary barrier technology allows for reliable I max. 20 mA at 125 C RM operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, T max. 175 C J freewheeling diodes, and reverse battery protection. Diode variation Common cathode E 0.4 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 60 A F(AV) V 150 V RRM I t = 5 s sine 710 A FSM p V 30 A , T = 125 C (typical, per leg) 0.69 V F pk J T Range - 55 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-60CTQ150PbFVS-60CTQ150-N3UNITS Maximum DC reverse voltage V R 150 150 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average per leg 30 forward current I 50 % duty cycle at T = 137 C, rectangular waveform F(AV) C per device 60 See fig. 5 A Following any rated Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse 710 load condition and surge current per leg I FSM with rated V RRM 10 ms sine or 6 ms rect. pulse 270 See fig. 7 applied Non-repetitive avalanche energy per leg E T = 25 C, I = 0.9 A, L = 1 mH 0.4 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.9 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 02-Jul-12 Document Number: 94240 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-60CTQ150PbF, VS-60CTQ150-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP MAX. UNITS 30 A 0.83 0.88 T = 25 C J 60 A 0.98 1.09 Maximum forward voltage drop per leg (1) V V FM See fig. 1 30 A 0.67 0.72 T = 125 C J 60 A 0.82 0.87 T = 25 C 775 A Maximum reverse leakage current per leg J I V = Rated V RM R R See fig. 2 T = 125 C 7.2 20 mA J Typical junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C - 650 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body -7.5 nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range per leg DC operation See fig. 4 1.2 Maximum thermal resistance, R thJC junction to case per package DC operation 0.6 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.25 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-220AB 60CTQ150 Revision: 02-Jul-12 Document Number: 94240 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000