VS-63CTQ100PbF, VS-63CTQ100-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 30 A FEATURES Base common 175 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance TO-220AB Guard ring for enhanced ruggedness and long Anode 2 Anode Common 13 term reliability cathode Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 PRODUCT SUMMARY Halogen-free according to IEC 61249-2-21 definition Package TO-220AB (-N3 only) I 2 x 30 A F(AV) DESCRIPTION V 100 V R V at I 0.69 V This center tap Schottky rectifier has been optimized for low F F reverse leakage at high temperature. The proprietary barrier I max. 20 mA at 125 C RM technology allows for reliable operation up to 175 C T max. 175 C J junction temperature. Typical applications are in switching Diode variation Common cathode power supplies, converters, freewheeling diodes, and E 11.25 mJ AS reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform (per device) 60 A F(AV) V 100 V RRM I T = 139 C (per leg) 60 FRM C A I t = 5 s sine 1500 FSM p V 30 A , T = 125 C 0.69 V F pk J T Range - 65 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-63CTQ100PbFVS-63CTQ100-N3UNITS Maximum DC reverse voltage V R 100 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 30 Maximum average I 50 % duty cycle at T = 139 C, rectangular waveform F(AV) C forward current per device 60 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 140 C 60 FRM R C A 5 s sine or 3 s rect. pulse Following any rated load 1500 Maximum peak one cycle non-repetitive I condition and with rated FSM surge current per leg 10 ms sine or 6 ms rect. pulse V applied 300 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 0.75 A, L = 40 mH 11.25 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.75 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 29-Aug-11 Document Number: 94245 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-63CTQ100PbF, VS-63CTQ100-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX. UNITS 30 A 0.78 0.82 T = 25 C J 60 A 0.94 1.0 (1) Maximum forward voltage drop V V FM 30 A 0.64 0.69 T = 125 C J 60 A 0.78 0.83 T = 25 C 0.02 0.3 J Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 11 20 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 1100 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 65 to 175 C J Stg temperature range Maximum thermal resistance, R DC operation 1.2 thJC junction to case per leg C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style TO-220AB 63CTQ100 Revision: 29-Aug-11 Document Number: 94245 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000