VS-65PQ015PbF, VS-65PQ015-N3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 65 A FEATURES 125 C T operation (V < 5 V) J R Base cathode Single diode configuration 2 Optimized for OR-ing applications Ultralow forward voltage drop Guard ring for enhanced ruggedness and long 3 term reliability 2 1 13 High purity, high temperature epoxy Available Anode Anode encapsulation for enhanced mechanical TO-247AC strength and moisture resistance Designed and qualified according to JEDEC-JESD47 Material categorization: For definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package TO-247AC DESCRIPTION I 65 A F(AV) The VS-65PQ015... Schottky rectifier module has been V 15 V R optimized for ultralow forward voltage drop specifically for V at I 0.46 V F F the OR-ing of parallel power supplies. The proprietary I max. 870 mA at 100 C RM barrier technology allows for reliable operation up to 125 C junction temperature. Typical applications are in parallel T max. 125 C J switching power supplies, converters, reverse battery Diode variation Single die protection, and redundant power subsystems. E 9 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 65 A F(AV) V 15 V RRM I t = 5 s sine 1500 A FSM p V 65 A , T = 125 C 0.46 V F pk J T Range - 55 to 125 C J VOLTAGE RATINGS PARAMETER SYMBOL TEST CONDITIONS VS-65PQ015PbF VS-65PQ015-N3 UNITS T = 100 C 15 15 J Maximum DC reverse voltage V V R T = 125 C 5 5 J ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average I 50 % duty cycle at T = 83 C, rectangular waveform 65 F(AV) C forward current A 5 s sine or 3 s rect. pulse 1500 Following any rated load Maximum peak one cycle I condition and with rated FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse V applied 400 RRM Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 4.5 mH 9mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Jul-13 Document Number: 94246 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-65PQ015PbF, VS-65PQ015-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 65 A 0.50 T = 25 C J 130 A 0.71 (1) Forward voltage drop V V FM 65 A 0.46 T = 125 C J 130 A 0.76 T = 125 C V = 5 V 1.2 A J R (1) Reverse leakage current I T = 25 C 18 RM J V = Rated V mA R R T = 100 C 870 J Threshold voltage V 0.137 mV F(TO) T = T maximum J J Forward slope resistance r 4.9 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 4300 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction temperature range T - 55 to 125 J C Maximum storage temperature range T - 55 to 150 Stg Maximum thermal resistance, R DC operation 0.8 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.3 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style TO-247AC (JEDEC) 65PQ015 Revision: 17-Jul-13 Document Number: 94246 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000