333 3 VS-6CVH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 3 A FRED Pt FEATURES Base eSMP Series common Hyperfast recovery time cathode 4 175 C operating junction temperature Low forward voltage drop reduced Q and rr 44 soft recovery Low leakage current 2 11 Very low profile - typical height of 1.3 mm Common 22 cathode Ideal for automated placement 1 3 3 Polyimide passivation for high reliability standard Anode Anode SlimDPAK (TO-252AE) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Meets JESD 201 class 2 whisker test LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models DESCRIPTION / APPLICATIONS State of the art hyper fast recovery rectifiers designed with optimized performance of forward voltage drop and PRIMARY CHARACTERISTICS hyper fast recovery time. The planar structure and the platinum doped life tim e I 2 x 3 A F(AV) control guarantee the best overall performance, ruggedness V 100 V R and reliability characteristics. V at I 0.75 V F F These devices are intended for use in PFC boost stage in th e t (typ.) 20 ns AC/DC section of SMPS inverters or as freewheeling diodes . rr Their extremely optimized stored charge and low recovery T max. 175 C J current minimize the switching losses and reduce Package SlimDPAK (TO-252AE) over dissipation in the switching element and snubbers. Circuit configuration Common cathode MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 100 V RRM per leg 3 Average rectified forward current I Total device, rated V , T = 166 C F(AV) R C per device 6 A Non-repetitive peak surge current per leg I T = 25 C, 10 ms sine pulse wave 70 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 100 - - BR R R I = 3 A - 0.9 1.04 F I = 3 A, T = 150 C - 0.75 0.82 V F J Forward voltage V F I = 6 A - 1 1.2 F I = 6 A, T = 150 C - 0.85 1.01 F J V = V rated - - 5 R R Reverse leakage current I A R T = 150 C, V = V rated - - 80 J R R Junction capacitance C V = 100 V - 12 - pF T R Revision: 13-Jan-2021 Document Number: 96091 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-6CVH01-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 20 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R RR Reverse recovery time t ns rr T = 25 C -17 - J T = 125 C - 26 - J I = 3 A F T = 25 C - 1.8 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.2 - J V = 160 V R T = 25 C - 15 - J Reverse recovery charge Q nC rr T = 125 C - 41 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg (1)(2) Thermal resistance, junction to ambient R -7590C/W thJA (3) Thermal resistance, junction to mount, per leg R -3.24C/W thJM Marking device Case style SlimDPAK (TO-252AE) 6CVH01 Notes (1) The heat generated must be less than thermal conductivity from junction to ambient dP /dT < 1R D J thJA (2) Free air, mounted or recommended copper pad area thermal resistance R - junction to ambient thJA (3) Mounted on infinite heatsink 100 100 175 C 10 150 C 10 125 C 1 T = 175 C J T = -40 C 0.1 J 1 25 C T = 150 C J 0.01 T = 125 C J T = 25 C J 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-Jan-2021 Document Number: 96091 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R