VS-65EPF12LHM3, VS-65APF12LHM3 www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 65 A FEATURES Very low forward voltage drop Glass passivated pellet chip junction 2 AEC-Q101 qualified meets JESD 201 class 1A 1 1 whisker test 2 Flexible solution for reliable AC power 3 3 rectification TO-247AD 2L TO-247AD 3L Base cathode Base cathode High surge, low V rugged blocking diode for DC charging F 2 2 stations Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 13 1 3 APPLICATIONS Cathode Anode Anode Anode On-board and off-board EV / HEV battery chargers VS-65EPF12LHM3 VS-65APF12LHM3 Renewable energy inverters DESCRIPTION PRIMARY CHARACTERISTICS I 65 A High voltage rectifiers optimized for very low forward F(AV) voltage drop with moderate leakage, and short reverse V 1200 V R recovery time. V at I 1.42 V F F These devices are intended for use in main rectification I 830 A FSM (single or three phase bridge). t 95 ns rr T max. 150 C J Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single Snap factor 0.6 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 65 A F(AV) V 1200 V RRM I 830 A FSM t 1 A, 100 A/s 95 ns rr V 30 A, T = 25 C 1.20 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM I RRM RRM NON-REPETITIVE PEAK REVERSE PART NUMBER PEAK REVERSE VOLTAGE AT 150 C VOLTAGE V mA V VS-65EPF12LHM3 1200 1300 16 VS-65APF12LHM3 1200 1300 Revision: 22-Feb-18 Document Number: 96497 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-65EPF12LHM3, VS-65APF12LHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 113 C, 180 conduction half sine wave 65 F(AV) C 10 ms sine pulse, rated V applied 700 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 830 10 ms sine pulse, rated V applied 2450 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 3460 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 34 600 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 65 A, T = 25 C 1.42 V FM J Forward slope resistance r 4.6 m t T = 150 C J Threshold voltage V 0.9 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 16 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I FM Reverse recovery time t 480 ns rr I at 60 A t F pk rr Reverse recovery current I 25 A/s 8A rr t t a b t 25 C dir Reverse recovery charge Q 2.7 C rr dt Q rr I Snap factor S Typical 0.6 RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.25 thJC unction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.25 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Case style TO-247AD 2L 65EPF12LH Marking device Case style TO-247AD 3L 65APF12LH Revision: 22-Feb-18 Document Number: 96497 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000