VS-6CWH02FN-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common Ultrafast recovery time cathode 4 Low forward voltage drop Low leakage current 175 C operating junction temperature Meets MSL level 1, per J-STD-020, 2 Common LF maximum peak of 260 C DPAK (TO-252AA) cathode Material categorization: 13 Anode Anode for definitions of compliance please se e www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS Vishay Semiconductors 200 V series are the state of the art hyperfast recovery rectifiers specifically designed with PRIMARY CHARACTERISTICS optimized performance of forward voltage drop and I 2 x 3 A F(AV) hyperfast recovery time. V 200 V R The planar structure and the platinum doped life tim e V at I 0.9 V F F control, guarantee the best overall performance, ruggedness and reliability characteristics. t typ. See Recovery table rr These devices are intended for use in the output T max. 175 C J rectification stage of SMPS, UPS, DC/DC converters as well Package DPAK (TO-252AA) as freewheeling diode in low voltage inverters and chopper Circuit configuration Common cathode motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX.UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current per device I Total device, rated V , T = 159 C 6 F(AV) R C Non-repetitive peak surge current I 50 A FSM Peak repetitive forward current per diode I Rated V , square wave, 20 kHz, T = 159 C 6 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R I = 3 A - 0.9 1 F V I = 3 A, T = 125 C - 0.78 0.9 F J Forward voltage V F I = 6 A - 1 1.2 F I = 6 A, T = 125 C - 0.89 1.08 F J V = V rated - - 5 R R Reverse leakage current I A R T = 125 C, V = V rated - - 100 J R R Junction capacitance C V = 200 V - 12 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 09-Dec-2019 Document Number: 93498 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-6CWH02FN-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R Reverse recovery time t T = 25 C -19 - ns rr J T = 125 C - 26 - J I = 3 A F T = 25 C - 3.1 - J Peak recovery current I V = 160 V A RRM R T = 125 C - 4.6 - J dI /dt = 200 A/s F T = 25 C - 30 - J Reverse recovery charge Q nC rr T = 125 C - 60 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -65 - +175 C J Stg Thermal resistance, junction to case per leg R -- 5 C/W thJC -0.3 - g Weight -0.01 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style DPAK (TO-252AA) 6CWH02FN 100 100 T = 175 C J 10 150 C 10 125 C 1 100 C T = 175 C j 0.1 1 T = 125 C j 0.01 25 C T = 25 C j 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-Dec-2019 Document Number: 93498 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R