VS-6CWQ03FNPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 3.5 A FEATURES Base common cathode Popular D-PAK outline 4 Center tap configuration Small foot print, surface mountable Low forward voltage drop 2 High frequency operation Common cathode Guard ring for enhanced ruggedness and long term D-PAK (TO-252AA) 13 Anode Anode reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY Material categorization: for definitions of compliance Package D-PAK (TO-252AA) please see www.vishay.com/doc 99912 I 2 x 3.5 A F(AV) DESCRIPTION V 30 V R The VS-6CWQ03FNPbF surface mount, center tap, V at I See Electrical table F F Schottky rectifier series has been designed for applications I 50 mA at 125 C RM requiring low forward drop and small foot prints on PC T max. 150 C J board. Typical applications are in disk drives, switching Diode variation Common cathode power supplies, converters, freewheeling diodes, battery E 8 mJ AS charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 7 A F(AV) V 30 V RRM I t = 5 s sine 535 A FSM p V 3 A , T = 125 C (per leg) 0.35 V F pk J T Range -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-6CWQ03FNPbF UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 3.5 forward current I 50 % duty cycle at T = 134 C, rectangular waveform F(AV) C per device 7 See fig. 5 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 535 non-repetitive surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 90 See fig. 7 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 4 mH 8 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 28-Jan-11 Document Number: 94247 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-6CWQ03FNPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 3 A 0.45 T = 25 C J Maximum forward 6 A 0.52 (1) voltage drop per leg V V FM 3 A 0.35 See fig. 1 T = 125 C J 6 A 0.46 Maximum reverse T = 25 C 2 J (1) leakage current per leg I V = Rated V mA RM R R T = 125 C 50 See fig. 2 J Threshold voltage V 0.22 V F(TO) T = T maximum J J Forward slope resistance r 32.86 m t Typical junction capacitance per leg C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 290 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -40 to +150 C J Stg temperature range per leg 4.7 Maximum thermal resistance, DC operation R C/W thJC junction to case See fig. 4 per device 2.35 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 6CWQ03FN Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 28-Jan-11 Document Number: 94247 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000