VS-6CWQ04FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 3.5 A FEATURES Base common Low forward voltage drop cathode 4 Guard ring for enhanced ruggedness and long term reliability Popular D-PAK outline Center tap configuration 2 Small foot print, surface mountable Common cathode High frequency operation D-PAK (TO-252AA) 13 Anode Anode Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package D-PAK (TO-252AA) DESCRIPTION I 2 x 3.5 A F(AV) The VS-6CWQ04FN-M3 surface mount, center tap, V 40 V R Schottky rectifier series has been designed for applications V at I See Electrical table requiring low forward drop and small foot prints on PC F F board. Typical applications are in disk drives, switching I 24 mA at 125 C RM power supplies, converters, freewheeling diodes, battery T max. 150 C J charging, and reverse battery protection. Diode variation Common cathode E 8 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 7 A F(AV) V 40 V RRM I t = 5 s sine 500 A FSM p V 3 A , T = 125 C (per leg) 0.49 V F pk J T Range -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-6CWQ04FN-M3UNITS Maximum DC reverse voltage V R 40 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 3.5 forward current I 50 % duty cycle at T = 135 C, rectangular waveform F(AV) C per device 7 See fig. 5 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 500 non-repetitive surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 80 See fig. 7 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 16 mH 8.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 22-Nov-16 Document Number: 93316 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-6CWQ04FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.53 T = 25 C J 6 A 0.67 Maximum forward voltage drop per leg (1) V V FM See fig. 1 3 A 0.49 T = 125 C J 6 A 0.62 Maximum reverse leakage T = 25 C 2 J (1) current per leg I V = Rated V mA RM R R T = 125 C 24 See fig. 2 J Threshold voltage V 0.34 V F(TO) T = T maximum J J Forward slope resistance r 37.33 m t Typical junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 189 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum junction and storage (1) T , T -40 to +150 C J Stg temperature range per leg 4.70 Maximum thermal resistance, DC operation R C/W thJC junction to case See fig. 4 per device 2.35 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 6CWQ04FN Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 22-Nov-16 Document Number: 93316 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000