VS-6CWQ10FNHM3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 3.5 A
FEATURES
Base
common
Low forward voltage drop
cathode
4
Guard ring for enhanced ruggedness and long
term reliability
Popular D-PAK outline
Center tap configuration
2
Small foot print, surface mountable
Common
cathode
D-PAK (TO-252AA)
High frequency operation
13
Anode Anode
AEC-Q101 qualified
Meets JESD 201 class 2 whisker test
Meets MSL level 1, per J-STD-020, LF maximum peak
PRODUCT SUMMARY
of 260 C
Package D-PAK (TO-252AA)
Material categorization: For definitions of compliance
I 2 x 3.5 A
F(AV)
please see www.vishay.com/doc?99912
V 100 V
R
V at I See Electrical table DESCRIPTION
F F
The VS-6CWQ10FNHM3 surface mount, center tap,
I 4.9 mA at 125 C
RM
Schottky rectifier series has been designed for applications
T max. 150 C
J
requiring low forward drop and small foot prints on PC
Diode variation Common cathode
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
E 5 mJ
AS
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 7 A
F(AV)
V 100 V
RRM
I t = 5 s sine 440 A
FSM p
V 3 A , T = 125 C (per leg) 0.63 V
F pk J
T Range - 40 to 150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-6CWQ10FNHM3 UNITS
Maximum DC reverse voltage V
R
100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average
per leg 3.5
forward current I 50 % duty cycle at T = 135 C, rectangular waveform
F(AV) C
per device 7
See fig. 5
A
Maximum peak one cycle Following any rated load
5 s sine or 3 s rect. pulse 440
non-repetitive surge current per leg I condition and with rated
FSM
10 ms sine or 6 ms rect. pulse 70
See fig. 7 V applied
RRM
Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 10 mH 5.0 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current per leg I 0.5 A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 21-Aug-13 Document Number: 94727
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-6CWQ10FNHM3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
3 A 0.81
T = 25 C
J
Maximum forward
6 A 0.96
(1)
voltage drop per leg V V
FM
3 A 0.63
See fig. 1
T = 125 C
J
6 A 0.74
Maximum reverse
T = 25 C 1
J
(1)
leakage current per leg I V = Rated V mA
RM R R
T = 125 C 4.9
See fig. 2 J
Threshold voltage V
0.48 V
F(TO)
T = T maximum
J J
Forward slope resistance r 30.89 m
t
Typical junction capacitance per leg C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 92 pF
T R DC
Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
(1)
T , T - 40 to 150 C
J Stg
temperature range
per leg 4.70
Maximum thermal resistance, DC operation
R C/W
thJC
junction to case See fig. 4
per device 2.35
0.3 g
Approximate weight
0.01 oz.
Marking device Case style D-PAK 6CWQ10FNH
Note
dP
tot 1
(1)
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT R
J thJA
Revision: 21-Aug-13 Document Number: 94727
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000