TSI10L200CW C0G Taiwan Semiconductor

TSI10L200CW Taiwan Semiconductor 10A, 200V Trench Schottky Rectifier FEATURES KEY PARAMETERS Patented Trench Schottky technology PARAMETER VALUE UNIT Excellent high temperature stability I 10 A F Low forward voltage V 200 V RRM Low power loss/ high efficiency High forward surge capability I 100 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 2 Package TO-262 (I PAK) Configuration Dual dies APPLICATIONS Switching mode power supply (SMPS) Adapters DC to DC converter MECHANICAL DATA 2 Case: TO-262 (I PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test 2 TO-262 (I PAK) Polarity: As marked Weight: 1.60g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL TSI10H200CW UNIT Marking code on the device TSI10H200CW Repetitive peak reverse voltage V 200 V RRM Reverse voltage, total rms value V 140 V R(RMS) Forward current I 10 A F Surge peak forward current, 8.3ms single half sine wave I 100 A FSM superimposed on rated load Critical rate of rise of off-state voltage dv/dt 10,000 V/s Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version: B2104 TSI10L200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 5 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 5A, T = 25C 0.84 0.90 V F J I = 10A, T = 25C 0.92 0.98 V F J (1) Forward voltage per diode V F I = 5A, T = 125C 0.72 0.78 V F J I = 10A, T = 125C 0.80 0.86 V F J T = 25C - 50 A J (2) Reverse current rated V per diode I R R T = 125C - 5 mA J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING 2 TSI10L200CW TO-262 (I PAK) 50 / Tube 2 Version: B2104