X-On Electronics has gained recognition as a prominent supplier of SS210LW RVG Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. SS210LW RVG Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

SS210LW RVG Taiwan Semiconductor

SS210LW RVG electronic component of Taiwan Semiconductor
Images are for reference only
See Product Specifications
Part No.SS210LW RVG
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 2A 100V Schottky Rectifier
Datasheet: SS210LW RVG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

643: USD 0.0771 ea
Line Total: USD 49.58

Availability - 0
MOQ: 643  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 12000
Multiples : 1
12000 : USD 0.0538
15000 : USD 0.0533
20000 : USD 0.0528
24000 : USD 0.0521
25000 : USD 0.0516
30000 : USD 0.0511
40000 : USD 0.0507
50000 : USD 0.0502
100000 : USD 0.0497

0
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 12000
Multiples : 12000
12000 : USD 0.1275
24000 : USD 0.1238
48000 : USD 0.12

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 643
Multiples : 3000
643 : USD 0.0771
6000 : USD 0.0663
9000 : USD 0.0649

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 42
Multiples : 42
42 : USD 0.1745
50 : USD 0.1669
100 : USD 0.1663
250 : USD 0.1659
500 : USD 0.1627

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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We are delighted to provide the SS210LW RVG from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SS210LW RVG and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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SS24LW - SS220LW Taiwan Semiconductor CREAT BY ART 2A, 40V - 200V Surface Mount Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guard ring for over-voltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA SOD-123W Case: SOD-123W Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 16 mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A SS24 SS26 SS210 SS215 SS220 PARAMETER SYMBOL UNIT LW LW LW LW LW Marking Code 24LW 26LW 20LW 2ALW 2BLW Maximum repetitive peak reverse voltage V 40 60 100 150 200 V RRM Maximum RMS voltage V 28 42 70 105 140 V RMS Maximum DC blocking voltage V 40 60 100 150 200 V DC Maximum average forward rectified current I 2 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 0.55 0.70 0.85 0.95 V F 2 A Maximum reverse current rated V T =25C I 200 20 10 A R J R R JL 25 Typical thermal resistance C/W R 80 JA Operating junction temperature range T - 55 to +150 - 55 to +125 C J Storage temperature range T - 55 to +125 - 55 to +150 C STG Note 1: Pulse test with PW=300s, 1% duty cycle Version: B1906SS24LW - SS220LW Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE PACKAGE PACKING PART NO. PACKING CODE SUFFIX SUFFIX RV 3,000 / 7 Plastic reel SS2xLW H G SOD-123W (Note 1, 2) RQ 10,000 / 13 Paper reel Note 1: defines voltage from 40V (SS24LW) to 200V (SS220LW) Note 2: Whole series with green compound (halogen-free) EXAMPLE PART NO. PACKING CODE EXAMPLE P/N PART NO. PACKING CODE DESCRIPTION SUFFIX SUFFIX AEC-Q101 qualified SS24LWHRVG SS24LW H RV G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 2 TYPICAL FORWARD CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE Fig 1 10 2.5 Pulse width=300s SS26LW~SS220LW 1% duty cycle 2 1.5 Fig.2 1 SS24LW 1 SS26LW Resistive or 0.5 inductive load 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 26LW-25C LEAD TEMPERATURE (C) FORWARD VOLTAGE (V) 26LW-125C FIG. 3 MAXIMUM NON-REPETITIVE FORWARD FIG. 4 TYPICAL REVERSE CHARACTERISTICS SURGE CURRENT 10 50 SS26LW 40 1 8.3ms single half sine wave T =125C J 30 0.1 Fig.5 20 0.01 10 T =25C J 0 0.001 1 10 100 0 20 40 60 80 100 NUMBER OF CYCLES AT 60 Hz PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: B1906 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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