Surface Mount Schottky Power Rectifier MBRS230L, NRVBS230L, NRVBS230LNT3G SMB Power Surface Mount Package www.onsemi.com This device employs the Schottky Barrier principle in a metaltosilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low SCHOTTKY BARRIER voltage, high frequency switching power supplies free wheeling RECTIFIER diodes and polarity protection diodes. 2.0 AMPERES 30 VOLTS Features Compact Package with JBend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for OverVoltage Protection Low Forward Voltage Drop NRVBS Prefix for Automotive and Other Applications Requiring SMB Unique Site and Control Change Requirements AECQ101 CASE 403A Qualified and PPAP Capable* These Devices are PbFree and are RoHS Compliant MARKING DIAGRAM Mechanical Characteristics ALYW Case: Molded Epoxy 2BL3 Epoxy Meets UL 94, V0 0.125 in. Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal A = Assembly Location** L = Wafer Lot Leads are Readily Solderable Y = Year Maximum Temperature of 260C/10 Seconds for Soldering W = Work Week Available in 12 mm Tape, 2500 Units per 13 Reel, = PbFree Package Add T3 Suffix to Part Number (Note: Microdot may be in either location) Cathode Polarity Band **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Package Device Shipping SMB MBRS230LT3G 2500 / (PbFree) Tape & Reel NRVBS230LT3G* SMB 2500 / (PbFree) Tape & Reel SMB 2500 / NRVBS230LNT3G* (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: February, 2020 Rev. 6 MBRS230LT3/DMBRS230L, NRVBS230L, NRVBS230LNT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 2.0 A O (At Rated V , T = 110C) R C Peak Repetitive Forward Current I 4.0 A FRM (At Rated V , Square Wave, 20 kHz, T = 105C) R C NonRepetitive Peak Surge Current I 40 A FSM (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature T , T 55 to +175 C stg C Operating Junction Temperature T 55 to +125 C J Voltage Rate of Change dv/dt 10,000 V/ s (Rated V , T = 25C) R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, C/W JunctiontoLead (Note 1) R 18.6 JL Thermal Resistance, JunctiontoAmbient (Note 1) R 135 JA ELECTRICAL CHARACTERISTICS T = 25C T = 125C J J Maximum Instantaneous Forward Voltage (Note 2) V V F 0.50 0.45 (I = 2.0 A) F 0.60 0.63 see Figure 2 (I = 4.0 A) F T = 25C T = 125C J J Maximum Instantaneous Reverse Current (Note 2) I mA R 1 75 (V = 30 V) R 0.31 35 see Figure 4 (V = 15 V) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Minimum pad size (0.108 X 0.085) for each lead on FR4 board. 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. 10 10 1 T = 125C J 1 T = 125C J 0.1 25C 55C 100C 100C 25C 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V , MAXIMUM INSTANTANEOUS FORWARD F F VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F I , INSTANTANEOUS FORWARD CURRENT (AMPS) F