TST20H300CW C0G Taiwan Semiconductor

TST20H300CW Taiwan Semiconductor 20A, 300V Trench Schottky Rectifier FEATURES KEY PARAMETERS Patented Trench Schottky technology PARAMETER VALUE UNIT Excellent high temperature stability I 20 F A Low forward voltage V 300 Low power loss/ High efficiency RRM V High forward surge capability I 180 FSM A RoHS Compliant T 150 J MAX C Halogen-free according to IEC 61249-2-21 Package TO-220AB APPLICATIONS Configuration Dual dies Switching mode power supply (SMPS) Adapters DC to DC converters MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL TST20H300CW UNIT Marking code on the device TST20H300CW Repetitive peak reverse voltage V 300 V RRM Reverse voltage, total rms value V 210 V R(RMS) Forward current I 20 A F Surge peak forward current, 8.3 ms single half sine-wave I 180 A FSM superimposed on rated load Critical rate of rise of off-state voltage dv/dt 10,000 V/s Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:C2104 TST20H300CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 3 C/W JC Thermal Performance Note: Mounted on Heatsink Size of 3 x5 x0.25 Al-Plate. ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 10A, T = 25C 0.89 0.98 V F J (1) Forward voltage per diode V F I = 10A, T = 125C 0.75 0.84 V F J T = 25C - 100 J A (2) Reverse current rated V per diode I R R T = 125C - 10 J mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TST20H300CW TO-220AB 50 / Tube 2 Version:C2104