Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N www.onsemi.com This device employs the Schottky Barrier principle in a metaltosilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low SCHOTTKY BARRIER voltage, high frequency switching power supplies free wheeling RECTIFIER diodes and polarity protection diodes. 2.0 AMPERES, 60 VOLTS Features Compact Package with JBend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction GuardRing for OverVoltage Protection Low Forward Voltage Drop SMB NRVB Prefix for Automotive and Other Applications Requiring CASE 403A Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* MARKING DIAGRAM These are PbFree Devices Mechanical Characteristics AYWW B26 Case: Molded Epoxy Epoxy Meets UL 94 V0 0.125 in Weight: 95 mg (Approximately) B26 = Specific Device Code Cathode Polarity Band A = Assembly Location** Lead and Mounting Surface Temperature for Soldering Purposes: Y = Year 260C Max. for 10 Seconds WW = Work Week = PbFree Package Finish: All External Surfaces Corrosion Resistant and Terminal (Note: Microdot may be in either location) Leads are Readily Solderable **The Assembly Location code (A) is front side ESD Ratings: optional. In cases where the Assembly Location is Machine Model = C stamped in the package bottom (molding ejecter pin), Human Body Model = 3B the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping MBRS260T3G NRVBS260T3G* SMB 2,500 / (PbFree) NRVBS260T3GVF01* Tape & Reel NRVBS260NT3G* SRVBS260NT3G* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: February, 2020 Rev. 10 MBRS260T3/DMBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 95C) 2.0 R L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 60 Storage Temperature Range T 55 to +150 C stg Operating Junction Temperature T 55 to +125 C J Voltage Rate of Change dv/dt V/ s (Rated V , T = 25C) 10,000 R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 1) 24 C/W R JL Thermal Resistance, JunctiontoAmbient (Note 2) R 80 JA 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit v T = 25C T = 125C V Maximum Instantaneous Forward Voltage (Note 3) F J J 0.51 0.475 (i = 1.0 A) F 0.63 0.55 (i = 2.0 A) F Maximum Instantaneous Reverse Current (Note 3) I T = 25C T = 125C mA R J J (V = 60 V) 0.2 20 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. www.onsemi.com 2