Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS240LT3G, NRVBS240LT3G, www.onsemi.com NRVBS240LN These devicesemploy the Schottky Barrier principle in a SCHOTTKY BARRIER metaltosilicon power rectifier. Features epitaxial construction with RECTIFIER oxide passivation and metal overlay contact. Ideally suited for low 2.0 AMPERES, 40 VOLTS voltage, high frequency switching power supplies free wheeling diodes and polarity protection diodes. Features Compact Package with JBend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction GuardRing for Overvoltage Protection SMB CASE 403A Low Forward Voltage Drop ESD Ratings: MARKING DIAGRAM Human Body Model = 3B (> 16000 V) Machine Model = C (> 400 V) NRVB Prefix for Automotive and Other Applications Requiring AYWW Unique Site and Control Change Requirements AECQ101 2BL4 Qualified and PPAP Capable* These are PbFree Devices 2BL4 = Specific Device Code Mechanical Characteristics A = Assembly Location** Case: Molded Epoxy Y = Year Epoxy Meets UL 94 V0 0.125 in WW = Work Week = PbFree Package Weight: 95 mg (Approximately) (Note: Microdot may be in either location) Cathode Polarity Band **The Assembly Location code (A) is front side Maximum Temperature of 260C/10 Seconds for Soldering optional. In cases where the Assembly Location is Finish: All External Surfaces Corrosion Resistant and Terminal stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. Leads are Readily Solderable ORDERING INFORMATION Package Device Shipping MBRS240LT3G SMB 2,500 / (PbFree) Tape & Reel NRVBS240LT3G* SMB 2,500 / (PbFree) Tape & Reel 2,500 / SMB NRVBS240LNT3G* (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: January, 2020 Rev. 9 MBRS240LT3/DMBRS240LT3G, NRVBS240LT3G, NRVBS240LN MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 40 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 100C) 2.0 R C Peak Repetitive Forward Current I A FRM (At Rated V , Square Wave, 20 kHz, T = 105C) 4.0 R C NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 25 Storage Temperature T , T 55 to +150 C stg C Operating Junction Temperature T 55 to +150 C J Voltage Rate of Change dv/dt V/ s (Rated V , T = 25C) 10,000 R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 1) R 18 C/W JL Thermal Resistance, JunctiontoAmbient (Note 2) R 78 JA 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit V V T = 25C T = 125C Maximum Instantaneous Forward Voltage (Note 3) F J J see Figure 2 0.43 0.375 (I = 2.0 A) F 0.54 0.55 (I = 4.0 A) F I T = 25C T = 100C mA Maximum Instantaneous Reverse Current (Note 3) R J J see Figure 4 2.0 60 (V = 40 V) R 0.5 40 (V = 20 V) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. www.onsemi.com 2