NTSA4100, NRVTSA4100 Low Forward Voltage, Low Leakage Trench-based Schottky Rectifier Features www.onsemi.com Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage SCHOTTKY BARRIER Fast Switching with Exceptional Temperature Stability RECTIFIERS Low Power Loss and Lower Operating Temperature 4 AMPERES Higher Efficiency for Achieving Regulatory Compliance High Surge Capability 100 VOLTS NRVTSA Prefix for Automotive and Other Applications Requiring MARKING Unique Site and Control Change Requirements AECQ101 DIAGRAMS Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SMA Compliant TH41 CASE 403D AYWW STYLE 1 Typical Applications Switching Power Supplies including Wireless, Smartphone and Notebook Adapters TH41 = Specific Device Code A = Assembly Location High Frequency and DCDC Converters Y = Year Freewheeling and ORing diodes WW = Work Week Reverse Battery Protection = PbFree Package (Note: Microdot may be in either location) Instrumentation LED Lighting Mechanical Characteristics: ORDERING INFORMATION Case: Epoxy, Molded Device Package Shipping Epoxy Meets Flammability Rating UL 940 0.125 in. NTSA4100T3G SMA 5000 / Lead Finish: 100% Matte Sn (Tin) (PbFree) Tape & Reel Lead and Mounting SurfaceTemperature for Soldering Purposes: NRVTSA4100T3G SMA 5000 / 260C Max. for 10 Seconds (PbFree) Tape & Reel Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2015 Rev. 2 NTSA4100/DNTSA4100, NRVTSA4100 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 100 R Average Rectified Forward Current I 4.0 A F(AV) (T = 118C) L Peak Repetitive Forward Current, I 8.0 A FRM (Square Wave, 20 kHz, T = 110C) L NonRepetitive Peak Surge Current I 50 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +150 C stg Operating Junction Temperature T 55 to +150 C J ESD Rating (Human Body Model) 1B ESD Rating (Machine Model) M3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoLead, Steady State R 16.2 C/W JL 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) Thermal Resistance, JunctiontoAmbient, Steady State R 90 C/W JA 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 1.0 A, T = 25C) 0.43 F J (i = 4.0 A, T = 25C) 0.59 0.66 F J (i = 1.0 A, T = 125C) 0.35 F J (i = 4.0 A, T = 125C) 0.53 0.58 F J Reverse Current (Note 1) i R (Rated dc Voltage, T = 25C) 1.3 25 A J (Rated dc Voltage, T = 125C) 0.13 9 mA J Diode Capacitance C pF d (Rated dc Voltage, T = 25C, f = 1 MHz) 54.7 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2