Trench-based Schottky Rectifier, Low Forward Voltage, Low Leakage NRVTSS5100E, NRVTSAF5100E www.onsemi.com Features Fine Lithography Trenchbased Schottky Technology for Very Low SCHOTTKY BARRIER Forward Voltage and Low Leakage RECTIFIERS Fast Switching with Exceptional Temperature Stability 5 AMPERES Low Power Loss and Lower Operating Temperature 100 VOLTS Higher Efficiency for Achieving Regulatory Compliance High Surge Capability MARKING NRV Prefix for Automotive and Other Applications Requiring DIAGRAMS Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable AYWW SMB These are PbFree and HalideFree Devices TE51 CASE 403A Typical Applications Switching Power Supplies including Wireless, Smartphone and Notebook Adapters SMAFL E51 High Frequency and DCDC Converters CASE 403AA AYWW STYLE 6 Freewheeling and ORing diodes Reverse Battery Protection A = Assembly Location Instrumentation Y = Year LED Lighting WW = Work Week = PbFree Package Mechanical Characteristics: (Note: Microdot may be in either location) Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 940 0.125 in. ORDERING INFORMATION Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: Device Package Shipping 260C Max. for 10 Seconds NRVTSS5100ET3G SMB 2500 / Device Meets MSL 1 Requirements (PbFree) Tape & Reel NRVTSAF5100ET3G SMAFL 5000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2019 Rev. 3 NRVTSS5100E/DNRVTSS5100E, NRVTSAF5100E MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 100 R Average Rectified Forward Current I 5.0 A F(AV) (T = 100C) L Peak Repetitive Forward Current, I 10 A FRM (Square Wave, 20 kHz, T = 83C) L NonRepetitive Peak Surge Current I 50 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J ESD Rating (Human Body Model) 1B ESD Rating (Machine Model) M3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Maximum Thermal Resistance, Steady State (Note 1) C/W (NRVTSAF5100E) JunctiontoLead R 25 JL JunctiontoAmbient R 90 JA (NRVTSS5100E) JunctiontoLead R 13.1 JL JunctiontoAmbient R 71.1 JA 2 1. Assumes 600 mm 1 oz. copper bond pad, on a FR4 board ELECTRICAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Instantaneous Forward Voltage (Note 2) v V F (i = 3.0 A, T = 25C) 0.56 F J (i = 5.0 A, T = 25C) 0.65 0.69 F J (i = 3.0 A, T = 125C) 0.50 F J (i = 5.0 A, T = 125C) 0.56 0.62 F J Reverse Current (Note 2) i R (Rated dc Voltage, T = 25C) 2.6 29 A J (Rated dc Voltage, T = 125C) 2.2 5 mA J Diode Capacitance C pF d = 25C, f = 1 MHz) 54.4 (Rated dc Voltage, T J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2