NRVTSM245E Surface Mount Trench Schottky Power Rectifier POWERMITE Power Surface Mount Package www.onsemi.com Features Low Profile Maximum Height of 1.1 mm SCHOTTKY TRENCH 2 Small Footprint Footprint Area of 8.45 mm RECTIFIER Supplied in 12 mm Tape and Reel 2.0 AMPERES, 45 VOLTS Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink Fine Lithography Trenchbased Schottky Technology for Very Low CATHODE Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability ANODE Low Power Loss and Lower Operating Temperature POWERMITE Higher Efficiency for Achieving Regulatory Compliance CASE 457 High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 MARKING DIAGRAM Qualified and PPAP Capable These are PbFree and HalideFree Devices M 12 E24 Typical Applications Switching Power Supplies including Adapters & Flat Panel Displays High Frequency and DCDC Converters M = Date Code E24 = Device Code Freewheeling and ORing diodes = PbFree Package Reverse Battery Protection (Marking Style 1) Instrumentation Mechanical Characteristics: ORDERING INFORMATION Powermite is JEDEC Registered as D0216AA Device Package Shipping Case: Molded Epoxy NRVTSM245ET1G Powermite 3000 / Tape & Epoxy Meets UL 94 V0 0.125 in (PbFree) Reel Weight: 16.3 mg (Approximately) NRVTSM245ET3G Powermite 12000 / Tape & Lead and Mounting Surface Temperature for Soldering Purposes: (PbFree) Reel 260C Maximum for 10 Seconds For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: March, 2015 Rev. 0 NRVTSM245E/DNRVTSM245E MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM V RWM Working Peak Reverse Voltage V R DC Blocking Voltage Average Rectified Forward Current I 2.0 A O (T = 168C) L Peak Repetitive Forward Current I 4.0 A FRM (Square Wave, 20 kHz, T = 167C) L NonRepetitive Peak Surge Current I 50 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) T , T 65 to +175 C stg J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) 6.3 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) 82 C/W R JA Thermal Resistance, JunctiontoAmbient (Note 3) R 200 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit V V Maximum Instantaneous Forward Voltage (Note 4) F 0.65 (I = 2 A, T = 25C) F J 0.58 (I = 2 A, T = 125C) F J Maximum Instantaneous Reverse Current (Note 4) I R (Rated dc Voltage, T = 25C) 75 A J (Rated dc Voltage, T = 125C) 3 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 2 2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board. 2 3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%. www.onsemi.com 2