NSR10F40NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. www.onsemi.com Features 40 V SCHOTTKY Very Low Forward Voltage Drop 490 mV 1.0 A Low Reverse Current 10 A 10 V VR BARRIER DIODE 1.0 A of Continuous Forward Current ESD Rating Human Body Model: Class 3B 1 2 ESD Rating Machine Model: Class C CATHODE ANODE Very High Switching Speed These Devices are PbFree, Halogen Free/BFR Free and are RoHS MARKING Compliant 2 DIAGRAM Typical Applications PIN 1 LCD and Keypad Backlighting 1 10F40 Camera Photo Flash DSN2 YYY (0502) Buck and Boost dcdc Converters CASE 152AD Reverse Voltage and Current Protection Clamping & Protection 10F40 = Specific Device Code YYY = Year Code Markets Mobile Handsets MP3 Players ORDERING INFORMATION Digital Camera and Camcorders Device Package Shipping Notebook PCs & PDAs NSR10F40NXT5G DSN2 5000 / Tape & Reel GPS (PbFree) For information on tape and reel specifications, MAXIMUM RATINGS including part orientation and tape sizes, please Rating Symbol Value Unit refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Reverse Voltage V 40 V R Forward Current (DC) I 1.0 A F Forward Surge Current (60 Hz 1 cycle) I 18 A FSM Repetitive Peak Forward Current I 4.0 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) ESD Rating: Human Body Model ESD > 8 kV Machine Model > 400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2014 Rev. 4 NSR10F40/DNSR10F40NXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 228 C/W JA Total Power Dissipation T = 25C P 548 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 85 C/W JA Total Power Dissipation T = 25C P 1.47 W A D Storage Temperature Range T 40 to +125 C stg Junction Operating Temperature Range T 40 to +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 10 R (V = 40 V) 100 R Forward Voltage V V F (I = 0.5 A) 0.42 F (I = 1.0 A) 0.49 F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1 100000 150C T = 125C 10000 J 1000 125C T = 150C J 0.1 100 75C 10 1 0.01 25C 0.1 0.01 25C 75C 25C 25C 0.001 0.001 0.0 0.1 0.2 0.3 0.4 0.50251105025 30 35 40 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Forward Voltage Figure 2. Typical Reverse Current 200 T = 25C A 180 160 140 120 100 80 60 40 20 0 0150 1520 2530 35 40 V , REVERSE VOLTAGE (V) R Figure 3. Typical Capacitance www.onsemi.com 2 I , FORWARD CURRENT (A) F C, CAPACITANCE (pF) I , REVERSE CURRENT ( A) R