NTS260SFT1G ON Semiconductor

NTS260SF Very Low Forward Voltage Trench-based Schottky Rectifier Features www.onsemi.com Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage TRENCH SCHOTTKY Fast Switching with Exceptional Temperature Stability RECTIFIER Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance 2.0 AMPERES Low Thermal Resistance 60 VOLTS High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOD123FL Compliant CASE 498 Mechanical Characteristics: Case: Molded Epoxy MARKING DIAGRAM Epoxy Meets UL 94 V0 0.125 in Weight: 11.7 mg (Approximately) AADM Lead and Mounting Surface Temperature for Soldering Purposes: 260C Maximum for 10 Seconds MSL 1 AAD = Specific Device Code M = Date Code Typical Applications = PbFree Package Switching Power Supplies including Compact Adapters and Flat (Note: Microdot may be in either location) Panel Display High Frequency and DCDC Converters Freewheeling and ORing diodes ORDERING INFORMATION Reverse Battery Protection Device Package Shipping Instrumentation NTS260SFT1G SOD123 3000/Tape & Reel (PbFree) NTS260SFT3G SOD123 10000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: September, 2017 Rev. 3 NTS260SF/DNTS260SF MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 2.0 A O (T = 103C) L Peak Repetitive Forward Current I 4.0 A FRM (Square Wave, 20 kHz, T = 112C) L NonRepetitive Peak Surge Current I 25 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) T , T 65 to +150 C stg J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) 24.4 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) R 85 C/W JA Thermal Resistance, JunctiontoAmbient (Note 3) R 330 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit V V Maximum Instantaneous Forward Voltage (Note 4) F 0.55 (I = 1.0 A, T = 25C) F J 0.65 (I = 2.0 A, T = 25C) F J 0.48 (I = 1.0 A, T = 125C) F J 0.57 (I = 2.0 A, T = 125C) F J Maximum Instantaneous Reverse Current (Note 4) I R (Rated dc Voltage, T = 25C) 50 A J (Rated dc Voltage, T = 125C) 5 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 2 2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board. 2 3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%. www.onsemi.com 2