NTST40120CT, NTSJ40120CTG, NTSB40120CT-1G, NTSB40120CTG, NTSB40120CTT4G NTST40120CT, NTSJ40120CTG, NTSB40120CT1G, NTSB40120CTG, NTSB40120CTT4G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 120 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 120C) Per Device 40 R C Per Diode 20 Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 125C) Per Device 80 R C Per Diode 40 Nonrepetitive Peak Surge Current I 250 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 40 to +150 C J Storage Temperature T 40 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS NTST40120CTG, Rating Symbol NTSB40120CT1G NTSB40120CTG NTSJ40120CTG Unit Maximum Thermal Resistance per Diode JunctiontoCase R 1.3 0.79 4.0 C/W JC JunctiontoAmbient 70 46.3 105 C/W R JA ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (I = 5 A, T = 25C) 0.50 F J (I = 10 A, T = 25C) 0.60 F J (I = 20 A, T = 25C) 0.78 0.91 F J (I = 5 A, T = 125C) 0.43 F J (I = 10 A, T = 125C) 0.53 F J (I = 20 A, T = 125C) 0.63 0.71 F J Maximum Instantaneous Reverse Current (Note 1) I R (V = 90 V, T = 25C) 16 A R J (V = 90 V, T = 125C) 16 mA R J (Rated dc Voltage, T = 25C) 500 A J (Rated dc Voltage, T = 125C) 30 100 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%