NTS4101P MOSFET Power, Single, P-Channel, SC-70 -20 V, -1.37 A Features NTS4101P ELECTRICAL CHARACTERISTICS (T =25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 24.5 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 13.7 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 16 V DS T = 70C 5.0 J GatetoSource Leakage Current I V = 0 V, V = 8 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.45 0.64 1.5 V GS(TH) GS DS D Negative Threshold V /T 2.7 mV/C GS(TH) J Temperature Coefficient DraintoSource On Resistance R V = 4.5 V, I = 1.0 A 83 120 m DS(on) GS D V = 3.6 V, I = 0.7 A 88 130 GS D V = 2.5 V, I = 0.3 A 104 160 GS D Forward Transconductance G V = 5.0 V, I = 1.3 A 5.2 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 603 840 pF ISS GS V = 20 V DS Output Capacitance C 90 125 OSS Reverse Transfer Capacitance C 62 85 RSS Total Gate Charge Q V = 4.5 V, V = 4.5 V, 6.4 9.0 nC G(TOT) GS DS I = 1.0 A D Threshold Gate Charge Q 0.7 G(TH) GatetoSource Charge Q 1.0 GS GatetoDrain Charge Q 1.5 GD SWITCHING CHARACTERISTICS (Note 3) V = 4.5 V, V = 4.0 V, ns TurnOn Delay Time t 6.2 12 d(ON) GS DD I = 1.0 A, R = 6.2 D G Rise Time t 14.9 25 r TurnOff Delay Time t 26 40 d(OFF) Fall Time t 18 30 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.61 1.2 V SD GS J I = 0.3 A S T = 125C 0.5 J Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 10.9 20 ns RR GS SD I = 1.0 A S Charge Time T 7.1 a Discharge Time T 3.8 b Reverse Recovery Charge Q 4.25 nC RR 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.