NTUD3170NZ MOSFET Dual, N-Channel, Small Signal, SOT-963, 1.0 mm x 1.0 mm 20 V, 220 mA www.onsemi.com Features Dual NChannel MOSFET V R MAX I Max (BR)DSS DS(ON) D Offers a Low R Solution in the Ultra Small 1.0 x 1.0 mm DS(ON) 1.5 4.5 V Package 20 V 2.0 2.5 V 0.22 A 1.5 V Gate Voltage Rating 3.0 1.8 V Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely 4.5 1.5 V Thin Environments such as Portable Electronics This is a PbFree Device D1 D2 Applications General Purpose Interfacing Switch G1 G2 Optimized for Power Management in Ultra Portable Equipment Analog Switch NChannel MOSFET MAXIMUM RATINGS (T = 25C unless otherwise specified) S1 S2 J Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS PINOUT: SOT963 GatetoSource Voltage V 8 V GS Continuous Drain T = 25C 220 A Steady S 1 6 D Current (Note 1) 1 1 State T = 85C 160 I mA A D t 5 s T = 25C 280 A Power Dissipation Steady 125 G 5 G 2 1 2 (Note 1) State T = 25C P mW A D t 5 s 200 Pulsed Drain Current t = 10 s I 800 mA p DM 4 S D 3 2 2 Operating Junction and Storage Temperature T , 55 to C J T 150 STG Top View Source Current (Body Diode) (Note 2) I 200 mA S Lead Temperature for Soldering Purposes 260 C T L (1/8 from case for 10 s) MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using the minimum recommended pad size, 3 M SOT963 1 oz Cu. 1 CASE 527AD 2. Pulse Test: pulse width 300 s, duty cycle 2% 3 = Specific Device Code M = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: June, 2019 Rev. 1 NTUD3170NZ/DNTUD3170NZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) 1000 R C/W JA JunctiontoAmbient t = 5 s (Note 3) 600 3. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Zero Gate Voltage Drain Current T = 25C 50 nA J V = 0 V, V = 5 V GS DS T = 85C 200 I J DSS nA V = 0 V, V = 16 V T = 25C 100 GS DS J GatetoSource Leakage Current I V = 0 V, V = 5.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D DraintoSource On Resistance V = 4.5 V, I = 100 mA 0.75 1.5 GS D V = 2.5 V, I = 50 mA 1.0 2.0 GS D V = 1.8 V, I = 20 mA 1.4 3.0 R GS D DS(ON) V = 1.5 V, I = 10 mA 1.8 4.5 GS D V = 1.2 V, I = 1.0 mA 2.8 GS D Forward Transconductance g V = 5.0 V, I = 125 mA 0.48 S FS DS D SourceDrain Diode Voltage V V = 0 V, I = 10 mA 0.6 1.0 V SD GS S CAPACITANCES Input Capacitance C 12.5 ISS f = 1.0 MHz, V = 0 V GS Output Capacitance C 3.6 pF OSS V = 15 V DS Reverse Transfer Capacitance C 2.6 RSS SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4) GS TurnOn Delay Time t 16.5 d(ON) Rise Time t 25.5 r V = 4.5 V, V = 10 V, I = 200 mA, GS DD D ns R = 2.0 G TurnOff Delay Time t 142 d(OFF) Fall Time t 80 f 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTUD3170NZT5G SOT963 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2