X-On Electronics has gained recognition as a prominent supplier of NTZS3151PT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTZS3151PT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTZS3151PT1G ON Semiconductor

NTZS3151PT1G electronic component of ON Semiconductor
NTZS3151PT1G ON Semiconductor
NTZS3151PT1G MOSFETs
NTZS3151PT1G Semiconductors

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See Product Specifications
Part No. NTZS3151PT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET -20V -950mA P-Channel
Datasheet: NTZS3151PT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1835 ea
Line Total: USD 0.92 
Availability - 9325
Ship by Thu. 16 Jan to Tue. 21 Jan
MOQ: 5  Multiples: 5
Pack Size: 5

 NTZS3151PT1G More Buying Options & Price Grid(s)

Availability Price Quantity
5314
Ship by Thu. 09 Jan to Wed. 15 Jan
MOQ : 156
Multiples : 1
156 : USD 0.4155
225 : USD 0.2883
228 : USD 0.2846
421 : USD 0.1545
425 : USD 0.1529
500 : USD 0.1513
1000 : USD 0.1103
3000 : USD 0.1078

9325
Ship by Thu. 16 Jan to Tue. 21 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1835
50 : USD 0.1313
150 : USD 0.1089
500 : USD 0.0811
2500 : USD 0.0686
4000 : USD 0.0612

5668
Ship by Tue. 07 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.484
10 : USD 0.3058
100 : USD 0.1529
1000 : USD 0.1056
4000 : USD 0.0979

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTZS3151PT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTZS3151PT1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The NTZS3151PT1G is a P-Channel MOSFET manufactured by ON Semiconductor. It has a drain–source breakdown voltage of -20V and a maximum drain current of -950mA. The MOSFET is designed with the latest ON Semiconductor design enhancements and features Ultra Low On-Resistance (RDS(on)) and fast switching performance. It is ideal for low voltage applications with its low gate drive requirements. The device is a silicon transistor with the gate, source and drain terminals.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Aptina / ON Semiconductor may also be referenced as

FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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