NTZS3151P MOSFET P-Channel, Small Signal, SOT-563 -20 V, -950 mA Features NTZS3151P ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 13 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current V = 0 V T = 25C 1.0 A GS J I DSS V = 20 V T = 125C 5.0 DS J GatetoSource Leakage Current I V = 0 V, V = 8.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.45 1.0 V GS(TH) GS DS D Negative Threshold V /T 2.4 mV/C GS(TH) J Temperature Coefficient DraintoSource On Resistance V = 4.5 V, I = 950 mA 120 150 m GS D V = 4.5 V, I = 770 mA 112 142 GS D R DS(on) V = 2.5 V, I = 670 mA 144 200 GS D V = 1.8 V, I = 200 mA 195 240 GS D Forward Transconductance g V = 10 V, I = 810 mA 3.1 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 458 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 61 OSS V = 16 V DS Reverse Transfer Capacitance C 38 RSS Total Gate Charge Q 5.6 nC G(TOT) V = 4.5 V, V = 10 V GS DS Threshold Gate Charge Q 0.6 G(TH) I = 770 mA D GatetoSource Charge Q 0.9 GS GatetoDrain Charge Q 1.2 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 5.0 ns d(ON) Rise Time t 12 r V = 4.5 V, V = 10 V, GS DD I = 950 mA, R = 6.0 D G TurnOff Delay Time t 23.7 d(OFF) Fall Time t 18 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage T = 25C 0.64 0.9 V J V = 0 V, GS V SD I = 360 mA S T = 125C 0.5 J Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 10.5 ns RR GS S I = 360 mA S 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.