IPA65R190C7 Infineon

IPA65R190C7 MOSFET PG-TO 220 FP 650V CoolMOS C7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching superjunction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability. Features Increased MOSFET dv/dt ruggedness Drain Pin 2 Better efficiency due to best in class FOM R *E and R *Q DS(on) oss DS(on) g Best in class R /package DS(on) Easy to use/drive *1 Gate Pb-free plating, halogen free mold compound Pin 1 Source Pin 3 Benefits *1: Internal body diode Enabling higher system efficiency Enabling higher frequency / increased power density solutions System cost / size savings due to reduced cooling requirements Higher system reliability due to lower operating temperatures Potential applications PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 190 m DS(on),max Qg.typ 23 nC I 49 A D,pulse E 400V 2.7 J oss Body diode di/dt 55 A/s Type / Ordering Code Package Marking Related Links IPA65R190C7 PG-TO220 FullPAK 65C7190 see Appendix A Final Data Sheet 1 Rev. 2.1, 2020-02-17650V CoolMOS C7 Power Device IPA65R190C7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2020-02-17