NTZD3154N MOSFET Dual, N-Channel, Small Signal 20 V, 540 mA Features www.onsemi.com Low R Improving System Efficiency DS(on) V R Typ I Max (Note 1) Low Threshold Voltage (BR)DSS DS(on) D 400 m 4.5 V Small Footprint 1.6 x 1.6 mm 20 500 m 2.5 V 540 mA ESD Protected Gate 700 m 1.8 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D1 D2 Applications Load/Power Switches Power Supply Converter Circuits G1 G2 Battery Management Cell Phones, Digital Cameras, PDAs, Pagers, etc. NChannel MOSFET S1 S2 MAXIMUM RATINGS (T = 25C unless otherwise noted.) J Parameter Symbol Value Unit MARKING DIAGRAM DraintoSource Voltage V 20 V DSS 6 GatetoSource Voltage V 7.0 V GS 1 TV M Continuous Drain Current T = 25C 540 mA A Steady SOT5636 I (Note 1) D State T = 85C 390 CASE 463A A TV = Specific Device Code Power Dissipation P 250 mW D Steady State (Note 1) M = Date Code = PbFree Package Continuous Drain Current T = 25C 570 mA A t 5 s I (Note: Microdot may be in either location) (Note 1) D T = 85C 410 A Power Dissipation P 280 mW D PINOUT: SOT563 t 5 s (Note 1) Pulsed Drain Current t = 10 s I 1.5 A p DM S 1 6 D 1 1 Operating Junction and Storage Temperature T , 55 to C J T 150 STG Source Current (Body Diode) I 350 mA S 5 G G 2 1 2 Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) THERMAL RESISTANCE RATINGS 4 S D 3 2 2 Parameter Symbol Max Unit JunctiontoAmbient Steady State 500 C/W Top View (Note 1) R JA JunctiontoAmbient t 5 s (Note 1) 447 ORDERING INFORMATION See detailed ordering and shipping information in the package Stresses exceeding those listed in the Maximum Ratings table may damage dimensions section on page 4 of this data sheet. the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu. area = 1.127 in sq 1 oz including traces). Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2019 Rev. 3 NTZD3154N/DNTZD3154N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage Tem- V /T 14 mV/C (BR)DSS J perature Coefficient Zero Gate Voltage Drain Current T = 25C 1.0 A J V = 0 V GS I DSS V = 16 V DS T = 125C 5.0 J GatetoSource Leakage Current I V = 0 V, V = 4.5 V 5.0 A GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 0.45 1.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 2.0 mV/C GS(TH) J DraintoSource On Resistance V = 4.5 V, I = 540 mA 0.4 0.55 GS D V = 2.5 V, I = 500 mA 0.5 0.7 R GS D DS(on) V = 1.8 V, I = 350 mA 0.7 0.9 GS D Forward Transconductance g V = 10 V, I = 540 mA 1.0 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 80 150 pF ISS Output Capacitance C 13 25 OSS V = 0 V, f = 1.0 MHz, V = 16 V GS DS Reverse Transfer Capacitance C 10 20 RSS Total Gate Charge Q 1.5 2.5 nC G(TOT) Threshold Gate Charge Q 0.1 G(TH) V = 4.5 V, V = 10 V I = 540 mA GS DS D GatetoSource Charge Q 0.2 GS GatetoDrain Charge Q 0.35 GD SWITCHING CHARACTERISTICS, V = V (Note 4) GS TurnOn Delay Time t 6.0 ns d(ON) Rise Time t 4.0 r V = 4.5 V, V = 10 V, I = 540 mA, GS DD D R = 10 G TurnOff Delay Time t 16 d(OFF) Fall Time t 8.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage T = 25C 0.7 1.2 V J V = 0 V, GS V SD I = 350 mA S T = 125C 0.6 J Reverse Recovery Time t V = 0 V, d /d = 100 A/ s, I = 350 mA 6.5 ns RR GS ISD t S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surfacemounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq 1 oz including traces). 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2