NTZD5110NT1G ON Semiconductor

NTZD5110N MOSFET Dual, N-Channel with ESD Protection, Small Signal, SOT-563 60 V, 310 mA NTZD5110N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 71 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 1.0 A DSS GS J V = 60 V DS T = 125C 500 J T = 25C 100 nA J V = 0 V GS V = 50 V DS T = 85C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 10 A GSS DS GS V = 0 V, V = 10 V 450 nA DS GS V = 0 V, V = 5.0 V 150 nA DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V 1.0 2.5 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.0 mV/C GS(TH) J DraintoSource On Resistance V = 10 V, I = 500 mA 1.19 1.6 GS D R DS(on) V = 4.5 V, I = 200 mA 1.33 2.5 GS D Forward Transconductance g V = 5.0 V, I = 200 mA 80 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 24.5 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 4.2 OSS V = 20 V DS Reverse Transfer Capacitance C 2.2 RSS nC Total Gate Charge Q 0.7 G(TOT) Threshold Gate Charge Q 0.1 G(TH) V = 4.5 V, V = 10 V GS DS I = 200 mA D GatetoSource Charge Q 0.3 GS GatetoDrain Charge Q 0.1 GD SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 12 ns d(ON) Rise Time t 7.3 r V = 10 V, V = 30 V, GS DD I = 200 mA, R = 10 D G TurnOff Delay Time t 63.7 d(OFF) Fall Time t 30.6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage T = 25C 0.8 1.2 V J V = 0 V, GS V SD I = 200 mA S T = 85C 0.7 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surfacemounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq 1 oz including traces). 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.