NTZD3155C MOSFET Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 mA www.onsemi.com Features I Max D Leading Trench Technology for Low RDS(on) Performance V R Typ (Note 1) (BR)DSS DS(on) High Efficiency System Performance 0.4 4.5 V Low Threshold Voltage NChannel 0.5 2.5 V 540 mA 20 V ESD Protected Gate 0.7 1.8 V Small Footprint 1.6 x 1.6 mm 0.5 4.5 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS PChannel 0.6 2.5 V 430 mA 20 V Compliant 1.0 1.8 V Applications DCDC Conversion Circuits PINOUT: SOT563 Load/Power Switching with Level Shift Single or Dual Cell LiIon Battery Operated Systems S 1 6 D 1 1 High Speed Circuits Cell Phones, MP3s, Digital Cameras, and PDAs G 2 5 G 1 2 MAXIMUM RATINGS (T = 25C unless otherwise specified) J Parameter Symbol Value Unit D 3 4 S 2 2 DraintoSource Voltage V 20 V DSS GatetoSource Voltage V 6 V GS Top View NChannel Continu- T = 25C 540 A Steady ous Drain Current MARKING State T = 85C 390 A (Note 1) 6 DIAGRAM t 5 s T = 25C 570 A 1 I mA D PChannel Continu- T = 25C 430 A TW M Steady SOT5636 ous Drain Current State CASE 463A T = 85C 310 A (Note 1) t 5 s T = 25C 455 A TW = Specific Device Code 250 M = Date Code Power Dissipation Steady (Note 1) State = PbFree Package T = 25C P mW A D (Note: Microdot may be in either location) 280 t 5 s Pulsed Drain Current NChannel 1500 ORDERING INFORMATION t = 10 s I mA DM p PChannel 750 Device Package Shipping Operating Junction and Storage Temperature T , 55 to C J NTZD3155CT1G T 150 STG 4000 / Tape & Reel SOT563 NTZD3155CT2G Source Current (Body Diode) I 350 mA S (PbFree) NTZD3155CT5G 8000 / Tape & Reel Lead Temperature for Soldering Purposes 260 C T L (1/8 from case for 10 s) For information on tape and reel specifications, including part orientation and tape sizes, please Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specifications device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D. assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq 1 oz including traces). Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2019 Rev. 4 NTZD3155C/DNTZD3155C Thermal Resistance Ratings Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 2) R 500 C/W JA JunctiontoAmbient t = 5 s (Note 2) 447 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol N/P Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V N V = 0 V I = 250 A 20 V (BR)DSS GS D P I = 250 A 20 D DraintoSource Breakdown Voltage V( /T 18 mV/C BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I N V = 0 V, V = 16 V T = 25C 1.0 A DSS GS DS J P V = 0 V, V = 16 V 1.0 GS DS N V = 0 V, V = 16 V T = 125C 2.0 A GS DS J P V = 0 V, V = 16V 5.0 GS DS GatetoSource Leakage Current I P V = 0 V, V = 4.5 V 2.0 A GSS DS GS N 5.0 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V N V = V I = 250 A 0.45 1.0 V GS(TH) GS DS D P I = 250 A 0.45 1.0 D Gate Threshold V /T 1.9 mV/C GS(TH) J Temperature Coefficient DraintoSource On Resistance R N V = 4.5 V, I = 540 mA 0.4 0.55 DS(on) GS D P V = 4.5V, I = 430 mA 0.5 0.9 GS D N V = 2.5 V, I = 500 mA 0.5 0.7 GS D P V = 2.5V, I = 300 mA 0.6 1.2 GS D N V = 1.8 V, I = 350 mA 0.7 0.9 GS D P V = 1.8V, I = 150 mA 1.0 2.0 GS D Forward Transconductance g N V = 10 V, I = 540 mA 1.0 FS DS D S P V = 10 V, I = 430 mA 1.0 DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 80 150 ISS f = 1 MHz, V = 0 V GS Output Capacitance C 13 25 N OSS V = 16 V DS Reverse Transfer Capacitance C 10 20 RSS pF Input Capacitance C 105 175 ISS f = 1 MHz, V = 0 V GS Output Capacitance C 15 30 P OSS V = 16 V DS Reverse Transfer Capacitance C 10 20 RSS 3. Pulse Test: pulse width 300 s, duty cycle 2% Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2