NTTFS4C05N MOSFET Power, Single, N-Channel, 8FL 30 V, 75 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R MAX I MAX (BR)DSS DS(on) D Compliant 3.6 m 10 V Applications 30 V 75 A DCDC Converters 5.1 m 4.5 V Power Load Switch Notebook Battery Management NChannel MOSFET MAXIMUM RATINGS (T = 25C unless otherwise stated) J D (58) Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V GS Continuous Drain I A T = 25C 19.4 A D G (4) Current R (Note 1) JA T = 85C 14.5 A Power Dissipation R T = 25C P 2.16 W JA A D S (1,2,3) (Note 1) Continuous Drain I A T = 25C 28 A D MARKING DIAGRAM Current R 10 s JA T = 85C 21 (Note 1) 1 A 1 S D Power Dissipation T = 25C P 4.5 W A D 4C05 WDFN8 S D R 10 s (Note 1) Steady JA AYWW ( 8FL) S D State Continuous Drain T = 25C I 12.0 A G D A D CASE 511AB Current R (Note 2) JA T = 85C 8.9 A Power Dissipation T = 25C P 0.82 W 4C05 = Specific Device Code A D R (Note 2) JA A = Assembly Location Y = Year Continuous Drain T = 25C I 75 A D C WW = Work Week Current R (Note 1) JC T = 85C 56 C = PbFree Package Power Dissipation T = 25C P 33 W C D (Note: Microdot may be in either location) R (Note 1) JC Pulsed Drain Current T = 25C, t = 10 s I 174 A A p DM Operating Junction and Storage Temperature T , 55 to C ORDERING INFORMATION J T +150 stg Device Package Shipping Source Current (Body Diode) I 30 A S NTTFS4C05NTAG WDFN8 1500 / Tape & Drain to Source dV/dt dV/dt 6.0 V/ns (PbFree) Reel Single Pulse DraintoSource Avalanche Energy E 84 mJ AS NTTFS4C05NTWG WDFN8 5000 / Tape & (T = 25C, V = 50 V, V = 10 V, I = 41 A , J DD GS L pk (PbFree) Reel L = 0.1 mH, R = 25 ) (Note 3) G For information on tape and reel specifications, Lead Temperature for Soldering Purposes T 260 C L including part orientation and tape sizes, please (1/8 from case for 10 s) refer to our Tape and Reel Packaging Specification Stresses exceeding those listed in the Maximum Ratings table may damage the Brochure, BRD8011/D. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at T = 25C, J V = 10 V, I = 29 A, E = 42 mJ. GS L AS Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: June, 2019 Rev. 2 NTTFS4C05N/DNTTFS4C05N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 3.8 JC JunctiontoAmbient Steady State (Note 4) R 57.8 JA C/W JunctiontoAmbient Steady State (Note 5) R 151.9 JA JunctiontoAmbient (t 10 s) (Note 4) R 27.6 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 12.6 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 11.7 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 2.9 3.6 DS(on) GS D m V = 4.5 V I = 30 A 4.1 5.1 GS D Forward Transconductance g V = 1.5 V, I = 15 A 68 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1988 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 15 V 1224 pF OSS GS DS Reverse Transfer Capacitance C 71 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.036 RSS ISS GS DS Total Gate Charge Q 14.5 G(TOT) Threshold Gate Charge Q 2.9 G(TH) nC GatetoSource Charge Q 5.2 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 5.5 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 31 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) TurnOn Delay Time t 11 d(ON) Rise Time t 30 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 20 d(OFF) Fall Time t 8.0 f 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2