NTTFS5116PL MOSFET Power -60 V, -20 A, 52 m Features Low R DS(on) Fast Switching www.onsemi.com These Devices are PbFree and are RoHS Compliant V R MAX I MAX (BR)DSS DS(on) D Applications 52 m 10 V Load Switches 60 V 20 A DC Motor Control 72 m 4.5 V DCDC Conversion PChannel MOSFET MAXIMUM RATINGS (T = 25C unless otherwise stated) J D (58) Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 5.7 A D A G (4) Current R (Note 1) JA T = 100C 4.0 A Power Dissipation R T = 25C P 3.2 W JA D A S (1,2,3) (Note 1) T = 100C 1.6 A Steady State Continuous Drain T = 25C I 20 A D C MARKING DIAGRAM Current R (Note 1) JC T = 100C 14 1 C 1 S D Power Dissipation P W T = 25C 40 D C 5116 WDFN8 S D R (Note 1) JC T = 100C 20 C AYWW ( 8FL) S D Pulsed Drain Current t = 10 s I 76 A DM G D p CASE 511AB Operating Junction and Storage Temperature T , 55 to C J T +175 stg 5116 = Specific Device Code Source Current (Body Diode) I 20 A A = Assembly Location S Y = Year Single Pulse DraintoSource Ava- L = 0.1 mH E 45 mJ AS WW = Work Week lanche Energy I 30 A AS = PbFree Package Lead Temperature for Soldering Purposes T 260 C L (Note: Microdot may be in either location) (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping THERMAL RESISTANCE MAXIMUM RATINGS NTTFS5116PLTAG WDFN8 1500/Tape & Reel (PbFree) Parameter Symbol Value Unit C/W JunctiontoCase Steady R 3.8 NTTFS5116PLTWG WDFN8 5000/Tape & Reel JC State (Note 1) (PbFree) JunctiontoAmbient Steady R 47 JA For information on tape and reel specifications, State (Note 1) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq Brochure, BRD8011/D. 2 oz including traces. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: June, 2019 Rev. 2 NTTFS5116PL/DNTTFS5116PL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 69.7 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1 3 V GS(TH) GS DS D Negative Threshold Temperature V /T 6.2 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V I = 6 A 37 52 m DS(on) GS D V = 4.5 V I = 4.4 A 51 72 GS D Forward Transconductance g V = 15 V, I = 6 A 11 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1258 pF iss Output Capacitance C 127 V = 0 V, f = 1.0 MHz, V = 30 V oss GS DS Reverse Transfer Capacitance C 84 rss Total Gate Charge Q V = 10 V, V = 48 V, I = 5 A 25 nC G(TOT) GS DS D V = 4.5 V, V = 48 V, I = 5 A 14 GS DS D Threshold Gate Charge Q 1 nC G(TH) GatetoSource Charge Q 4 GS V = 4.5 V, V = 48 V, I = 5 A GS DS D GatetoDrain Charge Q 7 GD Plateau Voltage V 3.1 V GP Gate Resistance R 5.3 G SWITCHING CHARACTERISTICS (Note 3) ns TurnOn Delay Time t 15 d(on) Rise Time t 58 r V = 4.5 V, V = 48 V, GS DS I = 5 A, R = 6 D G TurnOff Delay Time t 30 d(off) Fall Time t 37 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.79 1.2 V SD J V = 0 V, GS I = 5 A S T = 125C 0.64 J Reverse Recovery Time t 20 ns RR Charge Time t 15 a V = 0 V, d /d = 100 A/ s, GS IS t I = 5 A S Discharge Time t 5 b Reverse Recovery Charge Q 19 nC RR 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2