X-On Electronics has gained recognition as a prominent supplier of NTTFS5826NLTAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTTFS5826NLTAG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTTFS5826NLTAG ON Semiconductor

NTTFS5826NLTAG electronic component of ON Semiconductor
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See Product Specifications
Part No.NTTFS5826NLTAG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 60 V 8A (Ta) 3.1W (Ta), 19W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet: NTTFS5826NLTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.239 ea
Line Total: USD 358.5 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1500
Multiples : 1500
1500 : USD 0.4485

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 1.0323

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1500
Multiples : 1500
1500 : USD 0.4736

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 1.0323

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1500
Multiples : 1500
1500 : USD 0.239
3000 : USD 0.2294
6000 : USD 0.2294
7500 : USD 0.2294

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 2.1309
10 : USD 0.7834
100 : USD 0.5766
500 : USD 0.4562
1000 : USD 0.365

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1500
Multiples : 1500
1500 : USD 0.4678

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NTTFS5826NLTAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTTFS5826NLTAG and other electronic components in the MOSFETs category and beyond.

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NTTFS5826NL MOSFET Power, Single, N-Channel, 8FL 60 V, 24 m Features Small Footprint (3.3 x 3.3 mm) for Compact Designs NTTFS5826NL 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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