NTTFS5C454NL MOSFET Power, Single, N-Channel 40 V, 3.8 m , 85 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3.8 m 10 V 40 V 85 A Compliant 6 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (5) DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 85 A D C Current R G (4) JC T = 100C 60 (Notes 1, 3) C Steady State Power Dissipation P W T = 25C 55 C D S (1,2,3) R (Note 1) JC T = 100C 27 C NCHANNEL MOSFET Continuous Drain T = 25C I 20 A A D Current R JA T = 100C 14 (Notes 1, 2, 3) A MARKING Steady State DIAGRAM Power Dissipation T = 25C P 3.2 W D A R (Notes 1 & 2) JA 1 T = 100C 1.6 A 1 S D 454L S D Pulsed Drain Current T = 25C, t = 10 s I 520 A A p DM WDFN8 AYWW S D Operating Junction and Storage Temperature T , T 55 to C ( 8FL) J stg G D +175 CASE 511AB Source Current (Body Diode) I 61 A S 454L = Specific Device Code Single Pulse DraintoSource Avalanche E 202 mJ A = Assembly Location AS Energy (I = 5 A) L(pk) Y = Year WW = Work Week Lead Temperature for Soldering Purposes T 260 C L = PbFree Package (1/8 from case for 10 s) (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS See detailed ordering, marking and shipping information on page 5 of this data sheet. Parameter Symbol Value Unit JunctiontoCase Steady State R 2.7 C/W JC JunctiontoAmbient Steady State (Note 2) R 47 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2019 Rev. 4 NTTFS5C454NL/DNTTFS5C454NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 22 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 50 A 1.2 1.7 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.1 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 20 A 3.2 3.8 DS(on) GS D m V = 4.5 V I = 20 A 4.8 6 GS D Forward Transconductance g V = 15 V, I = 40 A 80 S FS DS D Gate Resistance R 1.4 G CHARGES AND CAPACITANCES Input Capacitance C 1600 ISS Output Capacitance C 590 OSS V = 0 V, f = 1 MHz, V = 25 V pF GS DS Reverse Transfer Capacitance C 21 RSS Output Charge Q V = 0 V, V = 20 V 21 nC OSS GS DD Total Gate Charge Q V = 10 V, V = 20 V I = 40 A 18 G(TOT) GS DS D Total Gate Charge Q 8.2 G(TOT) Threshold Gate Charge Q 2 nC G(TH) GatetoSource Charge Q 3.8 V = 4.5 V, V = 20 V I = 40 A GS GS DS D GatetoDrain Charge Q 2.1 GD Plateau Voltage V 3.2 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 9.3 d(ON) Rise Time t 100 r V = 4.5 V, V = 20 V, GS DS ns I = 40 A, R = 2.5 D G TurnOff Delay Time t 17 d(OFF) Fall Time t 4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.86 1.2 SD J V = 0 V, GS V I = 40 A S T = 125C 0.75 J Reverse Recovery Time t 29 RR Charge Time t 14 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 40 A S Discharge Time t 15 b Reverse Recovery Charge Q 20 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2