IPA60R600C6 Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.6 Final Power Management & MultimarketRev. 2.6 - H6YYV BEc6-CY O F KX S Y =C7- D- 6- =C5- D- 6- =CC- D- 6- =C4- D- 6- % 0BM LEKNEJI =bb GILo f T eXib hg baTel gXV ab bZl Ybe Z ib gTZX cbjXe GIL Mf& WXf ZaXW TVVbeW aZ gb g X fhcXe haVg ba LD ce aV c X TaW c baXXeXW Ul CaY aXba MXV ab bZ Xf( =bb GILo =0 fXe Xf Vb U aXf g X XkcXe XaVX bY g X XTW aZ LD GIL M fhcc Xe j g Z V Tff aabiTg ba( M X bYYXeXW WXi VXf cebi WX T UXaXY gf bY T YTfg fj gV aZ LD GIL M j X abg fTVe Y V aZ XTfX bY hfX( kgeX X l bj fj gV aZ TaW VbaWhVg ba bffXf T X fj gV aZ Tcc VTg bafXiXa beXXYY V Xag& beXVb cTVg& Z gXe&TaWVbb Xe( 1B>NOLBM n kgeX X l bj bffXf WhX gb iXel bj IG KKXUT BN TaW UXX AL>EI n OXel Z Vb hgTg ba ehZZXWaXff ZSX) n Tfl gb hfX)We iX Fully qualified according to JEDEC for Industrial Applications D>NB Halogen free mold compound, Pb-free plating ZSX( .KKGE >NEJIM MJOL B J = fgTZXf& TeW fj gV aZ JPG fgTZXf TaW eXfbaTag fj gV aZ ZSX * JPG fgTZXf Ybe X(Z( J= L iXeUbk& WTcgXe& F=> J>J MO& F Z g aZ& LXeiXe& MX XVb and NJL( J XTfX abgX4 be GIL M cTeT X aZ g X hfX bY YXee gX UXTWf ba g XZTgXbe fXcTeTgX gbgX cb Xf fZXaXeT l eXVb XaWXW( FKLVO ( >ObCO PY WKXMO CK KWO O 6>L>HBNBL <>GOB IEN 9 & /.) F 7D Q%SH % ) / 7UT %SH +) . T6 N%Y V *2 4 7%VZRXL 9 .**O +(3 rD UXX <bWl W bWX W)(K* .)) 4(aX FbZO &B NO SXQ6YNO CKMUKQO K USXQ DOVK ON SXU =A5/)C/))6/ A &E +/, C Q=0 JebWhVg <e XY =A7/)C/))6/ A &E +.+ = Q =0JbegYb b =AA/)C/))6/ A &E ++) /C/))6/ C Q =bb GIL PXUcTZX CJ 0*K0**=0 JA MI,,* h J E C Q >Xf Za gbb f 2020-05-20 Page 2