NSR15405NXT5G ON Semiconductor

NSR15405NXT5G 1.5 A, 40 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance www.onsemi.com enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. MARKING Features DIAGRAM Low Forward Voltage Drop 540 mV (Typ.) I = 1.5 A F PIN 1 Low Reverse Current 20 A (Typ.) V = 40 V R 1.5 A of Continuous Forward Current DSN2 5GM ESD Rating Human Body Model: Class 3B (0502) CASE 152AU ESD Rating Machine Model: Class C High Switching Speed 5G = Specific Device Code M = Date Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications PIN CONNECTIONS LCD and Keypad Backlighting Camera Photo Flash 1 2 CATHODE ANODE Buck and Boost dcdc Converters Reverse Voltage and Current Protection Clamping & Protection ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping Rating Symbol Value Unit NSR15405NXT5G DSN2 5000 / Tape & Reel (PbFree) Reverse Voltage V 40 V R For information on tape and reel specifications, Forward Current (DC) I 1.5 A F including part orientation and tape sizes, please Forward Surge Current I A FSM refer to our Tape and Reel Packaging Specifications (60 Hz 1 cycle) 13 Brochure, BRD8011/D. Repetitive Peak Forward Current I 3 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) ESD Rating: Human Body Model ESD > 8 kV Machine Model > 400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 0 NSR15405/DNSR15405NXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 255 C/W JA Total Power Dissipation T = 25C P 490 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 95 C/W JA Total Power Dissipation T = 25C P 1.32 W A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 650 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 SINGLE PULSE 0.1 0.01 0.00000001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 1. Thermal Response (Note 1) 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.01 0.00000001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 PULSE TIME (sec) Figure 2. Thermal Response (Note 2) www.onsemi.com 2 R(t) (C/W) R(t) (C/W)