NSR05T40XV2T5G ON Semiconductor

NSR05T40XV2 500 mA, 40 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving www.onsemi.com micropackaging ideal for space constraint applications. Features MARKING Low Forward Voltage Drop 530 mV (Typ.) I = 500 mA F 2 DIAGRAM Low Reverse Current 3.0 A (Typ.) V = 40 V R 1 500 mA of Continuous Forward Current YK SOD523 ESD Rating: Human Body Model: Class 3B 12 CASE 502 Charged Device Model: Class IV High Switching Speed YK = Specific Device Code M Date Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications 1 2 LCD and Keypad Backlighting CATHODE ANODE Camera Photo Flash Buck and Boost dcdc Converters Reverse Voltage and Current Protection ORDERING INFORMATION Clamping & Protection Device Package Shipping NSR05T40XV2T5G SOD523 8000 / Tape & MAXIMUM RATINGS (PbFree) Reel Rating Symbol Value Unit For information on tape and reel specifications, Reverse Voltage V 40 V including part orientation and tape sizes, please R refer to our Tape and Reel Packaging Specifications Forward Current (DC) I 500 mA F Brochure, BRD8011/D. Forward Surge Current I 3.0 A FSM (60 Hz 1 cycle) Repetitive Peak Forward Current I 1.5 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) ESD Rating: Human Body Model ESD > 8 kV Charged Device Model > 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: February, 2017 Rev. 1 NSR05T40XV2/D MNSR05T40XV2 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 489 C/W JA Total Power Dissipation T = 25C P 250 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 358 C/W JA Total Power Dissipation T = 25C P 350 mW A D Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 650 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 1000 D = 0.5 0.2 100 0.1 0.05 0.02 10 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 1. Thermal Response (Note 1) 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 2. Thermal Response (Note 2) www.onsemi.com 2 R(t) (C/W) R(t) (C/W)