X-On Electronics has gained recognition as a prominent supplier of NSR1030QMUTWG Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NSR1030QMUTWG Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

NSR1030QMUTWG ON Semiconductor

Hot NSR1030QMUTWG electronic component of ON Semiconductor
NSR1030QMUTWG ON Semiconductor
NSR1030QMUTWG Schottky Diodes & Rectifiers
NSR1030QMUTWG  Semiconductors

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See Product Specifications
Part No. NSR1030QMUTWG
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 1A 30 V SCHOTTKY FU LL BR
Datasheet: NSR1030QMUTWG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
200: USD 0.3243 ea
Line Total: USD 64.86 
Availability - 11576
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 200  Multiples: 1
Pack Size: 1
Availability Price Quantity
5740
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 179
Multiples : 1
179 : USD 0.3636
181 : USD 0.3586
184 : USD 0.3533
187 : USD 0.3482
250 : USD 0.3431
500 : USD 0.3379
1000 : USD 0.3328
3000 : USD 0.315

11576
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 200
Multiples : 1
200 : USD 0.3243
203 : USD 0.3204
221 : USD 0.2941
500 : USD 0.2735
1000 : USD 0.2599
3000 : USD 0.2401
6000 : USD 0.2151
24000 : USD 0.2136

2446
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.5913
10 : USD 0.505
100 : USD 0.3685
500 : USD 0.3168
1000 : USD 0.2959
3000 : USD 0.2607
6000 : USD 0.2497
24000 : USD 0.2431

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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We are delighted to provide the NSR1030QMUTWG from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSR1030QMUTWG and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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NSR1030QMUTWG Schottky Full Bridge, 1A, 30V These full bridge Schottky barrier diodes are designed for the rectification of the high speed signal of wireless charging. The NSR1030QMUTWG has a very low forward voltage that will reduce conduction loss. It is housed in a UDFN 3.0 x 3.0 x 0.5 mm package that is ideal for space constrained wireless applications. www.onsemi.com Features Extremely Fast Switching Speed MARKING Low Forward Voltage 0.49 V (Typ) I = 1 A F DIAGRAM These Devices are PbFree, Halogen Free and are RoHS Compliant 1 1030 UDFN4 3x3 Typical Applications AYWW CASE 517DB Low Voltage Full Bridge Rectification & Wireless Charging MAXIMUM RATINGS (T = 125C unless otherwise noted) (Note 1) J 1030 = Specific Device Code A = Assembly Location Rating Symbol Value Unit Y = Year Reverse Voltage V 30 V R WW = Work Week = PbFree Package Forward Current (DC) I 1.0 A F (Note: Microdot may be in either location) Forward Current Surge Peak I 12 A FSM (60 Hz, 1 cycle) NonRepetitive Peak Forward Current I A FSM PIN CONNECTIONS (Square Wave, T = 25C prior to surge) J t = 1 s 40 t = 1 ms 10 3.0 t = 1 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All specifications pertain to a single diode. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P 1.80 W D DEVICE SCHEMATIC T = 25C (Note 2) A Derate above 25C 18 mW/C Thermal Resistance Junction to Ambient R 55.5 C/W JA (Note 2) Total Device Dissipation P 0.70 W D T = 25C (Note 3) A Derate above 25C 7.0 mW/C Thermal Resistance Junction to Ambient R 142 C/W JA (Note 3) Total Device Dissipation P 0.80 W D ORDERING INFORMATION T = 25C (Note 4) A Derate above 25C 8.0 mW/C Device Package Shipping Thermal Resistance Junction to Ambient R 125 C/W JA NSR1030QMUTWG UDFN4 3000 / Tape & (Note 4) (PbFree) Reel Junction Temperature T +125 C J For information on tape and reel specifications, Storage Temperature Range T 55 to C including part orientation and tape sizes, please stg +150 refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 2 2. 4 Layer JEDEC JESD51.7 FR4 10 mm , 1 oz. copper trace, still air. 2 3. Single Layer JEDEC JESD51.3 FR4 100 mm , 1 oz. copper trace, still air. 2 4. Single Layer JEDEC JESD51.3 FR4 100 mm , 2 oz. copper trace, still air. Semiconductor Components Industries, LLC, 2015 Publication Order Number: May, 2017 Rev. 1 NSR1030QMU/D MNSR1030QMUTWG ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 5) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I = 1.0 mA) V 30 V R (BR) Reverse Leakage (V = 30 V) I 4.0 20 A R R Forward Voltage (I = 0.5 A) V 0.43 0.49 V F F Forward Voltage (I = 1.0 A) V 0.49 0.60 V F F Reverse Recovery Time t 25 ns rr (I = I = 10 mA, I = 1.0 mA) F R R(REC) Input Capacitance (pins 1 to 3) (V = 1.0 V, f = 1.0 MHz) C 70 pF R T Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. All specifications pertain to a single diode. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R SAMPLING V PULSE R OUTPUT PULSE OSCILLOSCOPE GENERATOR INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
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