NSR10F20NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. www.onsemi.com Features 20 V SCHOTTKY Low Forward Voltage Drop 430 mV 1.0 A Low Reverse Current 20 A 10 V VR BARRIER DIODE 1.0 A of Continuous Forward Current ESD Rating Human Body Model: Class 3B 1 2 ESD Rating Machine Model: Class C CATHODE ANODE High Switching Speed These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 Compliant Typical Applications 1 LCD and Keypad Backlighting DSN2 Camera Photo Flash (0502) Buck and Boost dcdc Converters CASE 152AD Reverse Voltage and Current Protection MARKINGS DIAGRAM Clamping & Protection PIN 1 Markets 10F20 Mobile Handsets YYY MP3 Players Digital Camera and Camcorders 10F20 = Specific Device Code YYY = Year Code Notebook PCs & PDAs PIN 1 GPS ADM MAXIMUM RATINGS Rating Symbol Value Unit AD = Specific Device Code Reverse Voltage V 20 V R M = Date Code Forward Current (DC) I 1.0 A F Forward Surge Current (60 Hz 1 cycle) I 18 A FSM Repetitive Peak Forward Current I 4.0 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) ORDERING INFORMATION ESD Rating: Human Body Model ESD > 8 kV Device Package Shipping Machine Model > 400 V NSR10F20NXT5G DSN2 5000 / Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2017 Rev. 3 NSR10F20/DNSR10F20NXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 228 C/W JA Total Power Dissipation T = 25C P 548 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 85 C/W JA Total Power Dissipation T = 25C P 1.47 W A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 20 R (V = 20 V) 100 R Forward Voltage V V F (I = 0.5 A) 0.380 0.400 F (I = 1.0 A) 0.430 0.450 F 10 100000 150C 10000 125C 1 1000 T = 125C J 100 75C T = 150C J 0.1 10 1 25C 25C 0.01 0.1 25C 75C 25C 0.01 0.001 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 4 8 12 16 20 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Forward Voltage Figure 2. Typical Reverse Current 300 T = 25C A 250 200 150 100 50 0 04 8 12 16 20 V , REVERSE VOLTAGE (V) R Figure 3. Typical Capacitance www.onsemi.com 2 I , FORWARD CURRENT (A) F C, CAPACITANCE (pF) I , REVERSE CURRENT ( A) R