NSR20F40NXT5G ON Semiconductor

NSR20F40NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. NSR20F40NXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 213 C/W JA Total Power Dissipation T = 25C P 586 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 80 C/W JA Total Power Dissipation T = 25C P 1.56 W A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 15 R (V = 40 V) 150 R Forward Voltage V V F (I = 1.0 A) 0.47 F (I = 2.0 A) 0.55 F 100,000 150C 1 10,000 125C 125C 1000 75C 100 0.1 10 150C 25C 1 0.01 25C 0.1 75C 25C 25C 0.01 0.001 0.001 0 5 10 15 20 25 30 35 40 0 0.1 0.2 0.3 0.4 0.5 0.6 V , REVERSE VOLTAGE (V) V , FORWARD VOLTAGE (V) R F Figure 1. Reverse Current vs. Reverse Voltage Figure 2. Forward Current vs. Forward Voltage 400 350 T = 25C A 300 250 200 150 100 50 0 0 5 10 15 20 25 30 35 40 V , REVERSE VOLTAGE (V) R Figure 3. Capacitance