NSS12201LT1G 12 V, 4.0 A, Low V CE(sat) NPN Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) are designed for use in low voltage, high speed switching applications www.onsemi.com where affordable efficient energy control is important. Typical applications are DCDC converters and power management 12 VOLTS, 4.0 AMPS in portable and battery powered products such as cellular and cordless NPN LOW V TRANSISTOR CE(sat) phones, PDAs, computers, printers, digital cameras and MP3 players. EQUIVALENT R 35 m Other applications are low voltage motor controls in mass storage DS(on) products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument COLLECTOR 2 3 cluster. The high current gain allows e PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. 1 BASE These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 2 MAXIMUM RATINGS (T = 25C) A EMITTER Rating Symbol Max Unit Collector-Emitter Voltage V 12 Vdc CEO 3 Collector-Base Voltage V 12 Vdc CBO Emitter-Base Voltage V 6.0 Vdc EBO 1 Collector Current Continuous I 2.0 A 2 C SOT23 (TO236) Collector Current Peak I 4.0 A CM CASE 318 Electrostatic Discharge ESD HBM Class 3B STYLE 6 MM Class C MAXIMUM RATINGS (T = 25C) A MARKING DIAGRAM Rating Symbol Max Unit THERMAL CHARACTERISTICS VF M Characteristic Symbol Max Unit 1 Total Device Dissipation P (Note 1) 460 mW D T = 25C A Derate above 25C 3.7 mW/C VF = Specific Device Code M = Date Code* Thermal Resistance, R (Note 1) 270 C/W JA JunctiontoAmbient = PbFree Package (Note: Microdot may be in either location) Total Device Dissipation P (Note 2) 540 mW D *Date Code orientation and/or overbar may T = 25C A vary depending upon manufacturing location. Derate above 25C 4.3 mW/C Thermal Resistance, R (Note 2) 230 C/W JA JunctiontoAmbient ORDERING INFORMATION Junction and Storage T , T 55 to C J stg Temperature Range +150 Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NSS12201LT1G SOT23 3000/Tape & Reel assumed, damage may occur and reliability may be affected. (PbFree) 2 1. FR4 100 mm , 1 oz. copper traces. 2 2. FR4 500 mm , 1 oz. copper traces. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: October, 2016 Rev. 6 NSS12201L/DNSS12201LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 12 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 12 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 6.0 E C Collector Cutoff Current I Adc CBO (V = 12 Vdc, I = 0) 0.1 CB E Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc) 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 10 mA, V = 2.0 V) 200 C CE (I = 500 mA, V = 2.0 V) 200 330 C CE (I = 1.0 A, V = 2.0 V) 200 C CE (I = 2.0 A, V = 2.0 V) 200 C CE Collector Emitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.1 A, I = 0.01 A) 0.003 0.008 C B (I = 1.0 A, I = 0.100 A) 0.035 0.050 C B (I = 1.0 A, I = 0.010 A) 0.053 0.080 C B (I = 2.0 A, I = 0.2 A) 0.068 0.090 C B Base Emitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 10 mA) 0.760 0.900 C B Base Emitter Turnon Voltage (Note 3) V V BE(on) (I = 1.0 A, V = 2.0 V) 0.750 0.900 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 150 C CE Input Capacitance (V = 0.5 V, f = 1.0 MHz) Cibo 450 pF EB Output Capacitance (V = 3.0 V, f = 1.0 MHz) Cobo 75 pF CB SWITCHING CHARACTERISTICS Delay (V = 10 V, I = 750 mA, I = 15 mA) t 100 ns CC C B1 d Rise (V = 10 V, I = 750 mA, I = 15 mA) t 100 ns CC C B1 r Storage (V = 10 V, I = 750 mA, I = 15 mA) t 350 ns CC C B1 s Fall (V = 10 V, I = 750 mA, I = 15 mA) t 110 ns CC C B1 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. www.onsemi.com 2