NSS12500UW3T2G 12 V, 8.0 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) NSS12500UW3T2G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 12 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 12 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 7.0 E C Collector Cutoff Current I Adc CBO (V = 12 Vdc, I = 0) 0.1 CB E Emitter Cutoff Current I Adc EBO (V = 7.0 Vdc) 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 4) h FE (I = 10 mA, V = 2.0 V) 250 C CE (I = 500 mA, V = 2.0 V) 250 C CE (I = 1.0 A, V = 2.0 V) 250 300 C CE (I = 2.0 A, V = 2.0 V) 200 300 C CE (I = 3.0 A, V = 2.0 V) 180 250 C CE Collector Emitter Saturation Voltage (Note 4) V V CE(sat) (I = 0.1 A, I = 0.010 A) (Note 5) 0.008 0.012 C B (I = 1.0 A, I = 0.100 A) 0.055 0.070 C B (I = 1.0 A, I = 0.010 A) 0.080 0.100 C B (I = 2.0 A, I = 0.020 A) 0.135 0.170 C B (I = 3.0 A, I = 0.030 A) 0.190 0.240 C B (I = 4.0 A, I = 0.400 A) 0.200 0.260 C B Base Emitter Saturation Voltage (Note 4) V V BE(sat) (I = 1.0 A, I = 0.01 A) 0.760 0.900 C B Base Emitter Turnon Voltage (Note 4) V V BE(on) (I = 2.0 A, V = 3.0 V) 0.800 0.900 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 100 C CE Input Capacitance (V = 0.5 V, f = 1.0 MHz) Cibo 650 pF EB Output Capacitance (V = 3.0 V, f = 1.0 MHz) Cobo 210 pF CB SWITCHING CHARACTERISTICS Delay (V = 10 V, I = 750 mA, I = 15 mA) t 100 ns CC C B1 d Rise (V = 10 V, I = 750 mA, I = 15 mA) t 150 ns CC C B1 r Storage (V = 10 V, I = 750 mA, I = 15 mA) t 325 ns CC C B1 s Fall (V = 10 V, I = 750 mA, I = 15 mA) t 200 ns CC C B1 f 4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2%. 5. Guaranteed by design but not tested.