VS-20TQ035-M3, VS-20TQ040-M3, VS-20TQ045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 20 A FEATURES Base 150 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical 1 3 strength and moisture resistance Cathode Anode 2L TO-220AC Guard ring for enhanced ruggedness and long term reliability Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 20 A F(AV) please see www.vishay.com/doc 99912 V 35 V, 40 V, 45 V R V at I 0.51 V F F DESCRIPTION I max. 105 mA at 125 C RM The VS-20TQ... Schottky rectifier series has been optimized T max. 150 C J for very low forward voltage drop, with moderate leakage. E 27 mJ AS The proprietary barrier technology allows for reliable Package 2L TO-220AC operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, Circuit configuration Single freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 20 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 1800 A FSM p V 20 A , T = 125 C 0.51 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-20TQ035-M3VS-20TQ040-M3VS-20TQ045-M3 UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse V RWM voltage ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 116 C, rectangular waveform 20 F(AV) C See fig. 5 A Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 1800 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 400 RRM See fig. 7 Non-repetitive avalanche energy E T = 25 C, I = 4 A, L = 3.4 mH 27 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 4A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 23-Nov-17 Document Number: 96263 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-20TQ035-M3, VS-20TQ040-M3, VS-20TQ045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 20 A 0.57 T = 25 C J 40 A 0.73 Maximum forward voltage drop (1) V V FM See fig. 1 20 A 0.51 T = 125 C J 40 A 0.67 T = 25 C 2.7 Maximum reverse leakage curent J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 105 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz) 25 C 1400 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and T , T -55 to +150 C J Stg storage temperature range Maximum thermal resistance, DC operation R 1.50 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 20TQ035 Marking device Case style 2L TO-220AC 20TQ040 20TQ045 Revision: 23-Nov-17 Document Number: 96263 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000