VS-10CTQ150-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A FEATURES Base 4 common 175 C T operation J cathode Center tap configuration Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for Anode 2 Anode 13Common enhanced mechanical strength and moisture resistance cathode 3L TO-220AB Guard ring for enhanced ruggedness and long term reliability Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 2 x 5 A F(AV) please see www.vishay.com/doc 99912 V 150 V R DESCRIPTION V at I 0.73 V F F This center tap Schottky rectifier series has been optimized I max. 7 mA at 125 C RM for low reverse leakage at high temperature. The proprietary T max. 175 C J barrier technology allows for reliable operation up to 175 C E 6.75 mJ AS junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and Package 3L TO-220AB reverse battery protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 10 A F(AV) V 150 V RRM I t = 5 s sine 620 A FSM p V 5 A , T = 125 C (per leg) 0.73 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10CTQ150-M3 UNITS Maximum DC reverse voltage V R 150 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 5 Maximum average forward I 50 % duty cycle at T = 155 C, rectangular waveform A F(AV) C current, see fig. 5 per device 10 5 s sine or 3 s rect. pulse Following any rated load 620 Maximum peak one cycle non-repetitive I condition and with rated A FSM surge current per leg, see fig. 7 10 ms sine or 6 ms rect. pulse V applied 115 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 0.30 A, L = 150 mH 6.75 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.30 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 20-Sep-17 Document Number: 96245 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10CTQ150-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 5 A 0.93 T = 25 C J 10 A 1.10 Maximum forward voltage drop per leg (1) V V FM See fig. 1 5 A 0.73 T = 125 C J 10 A 0.86 T = 25 C 0.05 J Maximum reverse leakage current per leg (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 7 J Threshold voltage V 0.468 V F(TO) T = T maximum J J Forward slope resistance r 28 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 200 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range Maximum thermal resistance, 3.50 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.75 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink (only for TO-220) 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style 3L TO-220AB 10CTQ150 Revision: 20-Sep-17 Document Number: 96245 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000