VS-10CTQ150SPbF, VS-10CTQ150-1PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A FEATURES VS-10CTQ150SPbFVS-10CTQ150-1PbF 175 C T operation J Center tap configuration Low forward voltage drop High frequency operation High purity, high temperature epoxy Base Base common common encapsulation for enhanced mechanical cathode cathode strength and moisture resistance 2 2 Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C 2 2 1 3 1 3 Common Common AEC-Q101 qualified cathode Anode Anode Anode cathode Anode Material categorization: for definitions of compliance 2 D PAK TO-262 please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY 2 Package D PAK, TO-262 This center tap Schottky rectifier has been optimized for low I 2 x 5 A reverse leakage at high temperature. The proprietary barrier F(AV) technology allows for reliable operation up to 175 C V 150 V R junction temperature. Typical applications are in switching V at I 0.93 V F F power supplies, converters, freewheeling diodes, and I 7 mA at 125 C RM reverse battery protection. T max. 175 C J Diode variation Common cathode E 5 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 10 A F(AV) V 150 V RRM I t = 5 s sine 620 A FSM p V 5 A , T = 125 C (per leg) 0.73 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS VS-10CTQ150SPbF PARAMETER SYMBOL UNITS VS-10CTQ150-1PbF Maximum DC reverse voltage V R 150 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 5 Maximum average I 50 % duty cycle at T = 155 C, rectangular waveform A F(AV) C forward current, see fig. 5 per device 10 5 s sine or 3 s rect. pulse Following any rated load 620 Maximum peak one cycle non-repetitive I condition and with rated A FSM surge current per leg, see fig. 7 10 ms sine or 6 ms rect. pulse 115 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 10 mH 5 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 20-May-14 Document Number: 94116 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10CTQ150SPbF, VS-10CTQ150-1PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 5 A 0.93 T = 25 C J 10 A 1.10 Maximum forward voltage drop per leg (1) V V FM See fig. 1 5 A 0.73 T = 125 C J 10 A 0.86 T = 25 C 0.05 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 7 J Threshold voltage V 0.468 V F(TO) T = T maximum J J Forward slope resistance r 28 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 200 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range Maximum thermal resistance, 3.50 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.75 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink (only for TO-220) 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 2 Case style D PAK 10CTQ150S Marking device Case style TO-262 10CTQ150-1 100 100 T = 175 C J 10 T = 150 C J 1 T = 175 C T = 125 C J J T = 125 C J 10 T = 25 C 0.1 J T = 100 C J 0.01 T = 75 C J T = 50 C J 0.001 T = 25 C J 1 0.0001 0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) (Per Leg) Revision: 20-May-14 Document Number: 94116 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R